Jiacheng Gao

发表

Spin excitations and spin wave gap in the ferromagnetic Weyl semimetal Co3Sn2S2

Huiqian Luo, H. Weng, S. Danilkin, 2020, Science China Physics, Mechanics & Astronomy.

Twisted nodal wires and three-dimensional quantum spin Hall effect in distorted square-net compounds

H. Weng, Changming Yue, D. Shao, 2021, Physical Review B.

Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel

A. Song, Yiming Wang, Qian Xin, 2020, Semiconductor Science and Technology.

Application of topological quantum chemistry in electrides

Z. Fang, H. Weng, S. Nie, 2020, Physical Review B.

A combinatory ferroelectric compound bridging simple ABO3 and A-site-ordered quadruple perovskite

L. Tjeng, Zhiwei Hu, H. Weng, 2020, Nature Communications.

A robust and tunable Luttinger liquid in correlated edge of transition-metal second-order topological insulator Ta$_2$Pd$_3$Te$_5$

Hao Wang, Qinghua Zhang, Guang Yang, 2022, 2210.06685.

Unprotected quadratic band crossing points and quantum anomalous Hall effect in FeB2 monolayer

H. Weng, Zhaopeng Guo, K. Jiang, 2021, Science China Physics, Mechanics & Astronomy.

Pressure-induced a Partial Disorder and Superconductivity in Quasi-One-Dimensional Weyl Semimetal (NbSe4)2I

C. Felser, Yulin Chen, Binghai Yan, 2021 .

in nickelates Ln n +1 Ni n O 2 n +2

H. Weng, C. Fang, Zhijun Wang, 2019 .

Magnetic band representations, Fu-Kane-like symmetry indicators, and magnetic topological materials

H. Weng, Zhaopeng Guo, Zhijun Wang, 2022, Physical Review B.

Atomically Resolved Edge States on a Layered Ferroelectric Oxide.

H. Weng, Jinxing Zhang, Junyan Liu, 2019, ACS applied materials & interfaces.

Unconventional materials: the mismatch between electronic charge centers and atomic positions.

Z. Fang, H. Weng, Zhaopeng Guo, 2021, Science bulletin.

Ultra-wide bandgap semiconductor Ga2O3 power diodes

M. Si, Jincheng Zhang, M. Kong, 2022, Nature Communications.

Robust Weyl Semimetal and Pressure-induced Superconductivity in Quasi-One-Dimensional (NbSe4)2I

C. Felser, Yulin Chen, Binghai Yan, 2021, 2105.13222.

Evolution of Weyl nodes in Ni-doped thallium niobate pyrochlore Tl2−xNixNb2O7

Z. Fang, H. Weng, Zhigao Huang, 2021, Science China Physics, Mechanics & Astronomy.

Electronic structure of the layered room-temperature antiferromagnet AlMn2B2

H. Weng, D. Shen, H. Su, 2021 .

Dynamic Band-Folding Induced Giant Unconventional Anomalous Hall Effect in Magnetic Weyl Semimetal EuB6

Xiaohong Xu, J. Cong, Youguo Shi, 2021 .

Irvsp: To obtain irreducible representations of electronic states in the VASP

Clas Persson, Jiacheng Gao, Quansheng Wu, 2020, Comput. Phys. Commun..

Layer construction of topological crystalline insulator LaSbTe

Z. Fang, H. Weng, C. Fang, 2019, 1911.09362.

High-throughput screening for Weyl semimetals with S4 symmetry.

Z. Fang, H. Weng, S. Nie, 2020, Science bulletin.

Palladium-Catalyzed Three-Component Dearomatization/Sulfonylation Cascade.

F. Hahn, M. Lautens, Jiacheng Gao, 2022, Organic letters.

Electronic structures and topological properties in nickelates Lnn+1NinO2n+2

H. Weng, C. Fang, Zhijun Wang, 2019, National science review.

Role of Shift Vector in High-Harmonic Generation from Noncentrosymmetric Topological Insulators under Strong Laser Fields

H. Weng, R. Lu, Shicheng Jiang, 2021, Physical Review X.

Weyl semimetals with S4 symmetry

Z. Fang, H. Weng, S. Nie, 2019, Physical Review B.

Non-Fermi-liquid behavior and saddlelike flat band in the layered ferromagnet AlFe2B2

H. Weng, D. Shen, H. Su, 2020, Physical Review B.

Magnetic-field modulation of topological electronic state and emergent magneto-transport in a magnetic Weyl semimetal

Haitao Yang, Meng Li, Rongjin Huang, 2021, Innovation (Cambridge (Mass.)).

Anisotropic magnetic entropy change in the hard ferromagnetic semiconductor VI3

Y. Sun, Jian‐Min Yan, P. Tong, 2019, Physical Review B.

A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique

M. Kong, Bingke Zhang, Hongqiang Yang, 2022, IEEE Journal of the Electron Devices Society.

A novel optimum variation lateral doping SiC LDMOS with improved performance

M. Kong, Bingke Zhang, Hongqiang Yang, 2022, Semiconductor Science and Technology.

A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

M. Kong, Bingke Zhang, Jiacheng Gao, 2021, IEEE Transactions on Electron Devices.

Interaction-driven topological phase transition in monolayer CrCl2 (pyrazine)

H. Weng, Hua Wu, Zhijun Wang, 2022, Physical Review B.

A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance

M. Kong, Bingke Zhang, Hongqiang Yang, 2022 .