J. R. Jenny

发表

High-purity semi-insulating 4H-SiC for microwave device applications

A. Powell, C. Carter, R. Glass, 2003 .

III-Nitride Epitaxial Material on Large-Diameter Semi-Insulating SiC Substrates for High Power RF Transistors

A. Saxler, E. Hutchins, J. R. Jenny, 2005 .

RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates

J. Sumakeris, S. Allen, S. Sriram, 2004 .

Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO

D. C. Reynolds, D. Look, R. L. Jones, 1998 .

The status of SiC bulk growth from an industrial point of view

C. Carter, R. Glass, S. Müller, 2000 .

OPTICAL AND ELECTRICAL CHARACTERIZATION OF BORON IMPURITIES IN SILICON CARBIDE GROWN BY PHYSICAL VAPOR TRANSPORT

M. Skowronski, R. Glass, W. Mitchel, 1996 .

Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices

A. Powell, R. Glass, S. Müller, 2004 .

Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates

M. Das, D. Malta, Calvin H. Carter Jr., 2006 .

Effects of annealing on carrier lifetime in 4H-SiC

R. Gutmann, M. Das, C. Carter, 2006 .

Microwave photoconductivity decay characterization of high-purity 4H-SiC substrates

R. Gutmann, C. Carter, J. Borrego, 2007 .

Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC

J. Skowronski, R. Glass, W. Mitchel, 1996 .

Semi‐insulating 6H–SiC grown by physical vapor transport

M. Skowronski, R. Glass, W. Mitchel, 1995 .

Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H–SiC

S. Müller, V. Tsvetkov, V. Konovalov, 2001 .

Growth kinetics of GaN grown by gas-source molecular beam epitaxy

K. Evans, R. Kaspi, J. R. Jenny, 1997 .

Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices

Adrian Powell, J. Sumakeris, A. Powell, 2005 .

The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaN

R. Kaspi, J. E. Nostrand, J. R. Jenny, 1998 .

High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

C. Carter, R. Glass, S. Müller, 2002 .

GROWTH OF SUBSTRATES

A. Powell, C. Carter, S. Müller, 2007 .

M. Skowronski, R. Glass, W. Mitchel, 1995 .

Electrical and optical investigation of the position of vanadium related defects in the 4H and 6H SiC bandgaps

S. R. Smith, M. Skowronski, W. Mitchel, 1996 .

Sublimation-Grown Semi-Insulating SiC for High Frequency Devices

J. Palmour, A. Powell, S. Allen, 2003 .

Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances

A. Powell, R. Glass, S. Müller, 2004 .

100 mm 4HN-SiC Wafers with Zero Micropipe Density

M. Paisley, A. Powell, V. Tsvetkov, 2008 .

GROWTH OF SiC SUBSTRATES

Adrian Powell, Calvin H. Carter, A. Powell, 2006 .

Growth and Characterization of Semiconductor Silicon Carbide for Electronic and Optoelectronic Applications: An Industrial Perspective

C. Carter, R. Glass, V. Tsvetkov, 2001 .

High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

John W. Palmour, J. Palmour, A. Powell, 2002 .

Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications

R. Glass, S. Müller, V. Tsvetkov, 2000 .

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

Adrian Powell, C. H. Carter, J. Sumakeris, 2006 .

On the compensation mechanism in high‐resistivity 6H–SiC doped with vanadium

M. Skowronski, R. Glass, W. Mitchel, 1995 .

Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

M. Das, J. Palmour, J. Sumakeris, 2004 .

Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates

A. Weber, M. Dudley, J. Oliver, 2006 .