Peter De Bisschop

发表

Stochastic effects in EUV lithography: random, local CD variability, and printing failures

Peter De Bisschop, P. Bisschop, 2017 .

How to make lithography patterns print: the role of OPC and pattern layout

Peter De Bisschop, 2015 .

Initial assessment of the impact of a hard pellicle on imaging using a 193-nm step-and-scan system

Michael Kocsis, Peter De Bisschop, Richard Joseph Bruls, 2004 .

Stochastic printing failures in extreme ultraviolet lithography

Peter De Bisschop, P. Bisschop, 2018 .

Calibration of physical resist models: methods, usability, and predictive power

Thomas Mülders, Thomas Schmöller, Ulrich Klostermann, 2009 .

High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography

Hiroyuki Shindo, Ir Kusnadi, John L. Sturtevant, 2011 .

Evaluation of Litel's in-situ interferometer (ISI) technique for measuring projection-lens aberrations: an initial study

Peter De Bisschop, P. Bisschop, 2003 .

Alignment and averaging of scanning electron microscope image contours for optical proximity correction modeling purposes

Peter De Bisschop, Jeroen Van de Kerkhove, 2010 .

Impact of mask three-dimensional effects on resist-model calibration

John J. Biafore, Thomas Schmoeller, Stewart A. Robertson, 2009 .

Evaluation of stray light and quantitative analysis of its impact on lithography

Geert Vandenberghe, Peter De Bisschop, Young-Chang Kim, 2005 .

Optical proximity correction: A cross road of data flows

Peter De Bisschop, 2016 .

Characterization of stray light of ArF lithographic tools: Modeling of power spectral density of an optical pupil

Geert Vandenberghe, Peter De Bisschop, Young-Chang Kim, 2006 .