J. M. Wang

发表

The sapphire substrate pretreatment effects on high-temperature annealed AlN templates in deep ultraviolet light emitting diodes

Z. Qin, X. Kang, X. L. Yang, 2019, CrystEngComm.

Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Z. Qin, W. Ge, X. Kang, 2021, IEEE Photonics Journal.

Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers

Z. J. Yang, C. C. Huang, Xiaodong Wang, 2012 .

Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

Z. Qin, X. Kang, X. L. Yang, 2021 .

Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer.

Xiaodong Wang, Z. Qin, W. Ge, 2019, Optics express.

Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission

Z. Qin, X. Kang, X. L. Yang, 2020 .

Improved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer.

Z. Qin, W. Ge, X. Kang, 2021, Optics Express.