R. Grüneberg

发表

Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting

M. Scheffler, S. Levchenko, C. Draxl, 2019, APL Materials.

Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire

W. Miller, N. Dropka, S. Bin Anooz, 2022, Journal of Crystal Growth.

Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy

M. Ramsteiner, M. Schmidbauer, K. Irmscher, 2019, Journal of Applied Physics.

Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (100) β-Ga2O3 thin films using in-situ reflectance spectroscopy

Z. Galazka, S. Bin Anooz, A. Popp, 2022, Journal of Crystal Growth.

Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

J. Schwarzkopf, K. Irmscher, Z. Galazka, 2021, AIP Advances.

Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE

M. Albrecht, J. Schwarzkopf, A. Fiedler, 2020 .

Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application

A. Fiedler, K. Tetzner, K. Irmscher, 2023, Applied Physics Letters.

Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films

W. Miller, N. Dropka, K. Irmscher, 2022, Applied Physics Letters.

Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach

W. Miller, N. Dropka, K. Irmscher, 2021, Crystals.

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

M. Albrecht, J. Schwarzkopf, A. Fiedler, 2020, Journal of Physics D: Applied Physics.

In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process

S. Bin Anooz, A. Popp, R. Grüneberg, 2024, Applied Surface Science.