Hsu Cynthia

128Gb 3-Bit Per Cell NAND Flash Memory on 19nm Technology with 18MB/s Write Rate

Pham Tuan, Li Yan, Kamei Teruhiko, 2012 .

13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with t PROG =75μs and t R =4μs

Hsu Cynthia, Sato Junichi, Yabe Hiroki, 2020 .

18MB/sを実現する128Gb 3-bit/cell 19nm NANDフラッシュメモリの開発(招待講演,メモリ(DRAM,SRAM,フラッシュ,新規メモリ)技術)

Chen Chen, Li Yan, Lee Seungpil, 2012 .