F. Brady

Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation

S. Li, W. Krull, D. Burk, 1988 .

LDD design tradeoffs for single transistor latch-up and hot carrier degradation control in accumulation mode FD SOI MOSFET's

D. Ioannou, F. Duan, S. Sinha, 1997 .

A scaleable, radiation hardened shallow trench isolation

J. Maimon, Frederick T. Brady, J. D. Maimon, 1999 .

Fully-depleted submicron SOI for radiation hardened applications

T. Scott, Nadim F. Haddad, R. Brown, 1994 .

Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications

H. L. Hughes, Patrick J. McMarr, B. J. Mrstik, 1996 .