D. Rowe

Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire

D. Jena, H. Xing, K. Chabak, 2021, Applied Physics Letters.

Liquid phase epitaxial growth and luminescence of InAs1-x-ySbxPy p-n junctions

Anthony Krier, A. Krier, D R Rowe, 1993 .

Photoluminescence of LPE-grown InAs1−x−ySbxPy for 2.55 μm lasers

A. Krier, D. Rowe, 1992 .

Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire

Michael C. Cao, D. Muller, Yongjin Cho, 2021, Science Advances.

Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

D. Jena, H. Xing, V. Protasenko, 2023, Japanese Journal of Applied Physics.