N. Arai

发表

β-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy

S. Fujita, T. Oshima, T. Okuno, 2009 .

Wet Etching of β-Ga2O3 Substrates

S. Fujita, T. Oshima, T. Okuno, 2009 .

Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing

K. Nakajima, T. Shishido, Masahiko Tanaka, 2008 .

Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing

Shinji Nakagomi, Yoshihiro Kokubun, S. Nakagomi, 2009 .

Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates

Takayoshi Oshima, Shizuo Fujita, S. Fujita, 2008 .

Flame Detection by a β-Ga2O3-Based Sensor

Takayoshi Oshima, Shizuo Fujita, S. Fujita, 2009 .

Surface morphology of homoepitaxial -Ga 2O 3 thin films grown by molecular beam epitaxy

Takayoshi Oshima, Shizuo Fujita, S. Fujita, 2008 .

Melting behavior and morphology of drawn nylon 6

Tamio Arakawa, N. Arai, Fumio Nagatoshi, 1969 .

Synthesis of β-SiC Layer in Silicon by Carbon Ion `Hot' Implantation

M. Kitabatake, T. Hirao, T. Izumi, 1992 .

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

Takayoshi Oshima, Shizuo Fujita, S. Fujita, 2008 .

Wet chemical etching behavior of β‐Ga2O3 single crystal

Naoki Arai, Shigeo Ohira, N. Arai, 2008 .

Wet Etching of $\beta$-Ga2O3 Substrates

S. Fujita, T. Oshima, T. Okuno, 2009 .