H. Takasaki

Photoluminescence properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II quantum well structures lattice-matched to InP

Y. Kawamura, H. Naito, N. Inoue, 2000 .

In0.53Ga0.47As/GaAs0.5Sb0.5/In0.52Al0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxy

Y. Kawamura, H. Naito, N. Inoue, 2002 .

Molecular Beam Epitaxial Growth and Characterization of GaAs1-ySby Layers on (111)B InP Substrates

Naohisa Inoue, Yuichi Kawamura, Hideki Takasaki, 2002 .

Molecular beam epitaxial growth and characterization of GaAs/sub 0.5/Sb/sub 0.5/ layers on [111]B InP substrates

M. Fujimoto, H. Takasaki, N. Inoue, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Molecular beam epitaxial growth and characterization of layers on (11l)B InP substrates

Y. Kawamura, N. Inoue, M. Fujimoto, 2001 .