B. Krishnan

发表

Novel techniques for selective doping of silicon carbide for device applications

B. Krishnan, 2009 .

Differences between chloro‐carbon and hydro‐carbon precursors in low‐temperature epitaxial growth of 4H‐SiC

Siva Kotamraju, Y. Koshka, B. Krishnan, 2010 .

Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC

Siva Kotamraju, Y. Koshka, B. Krishnan, 2011 .

Use of SiCl4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2010 .

Epitaxial Growth of 4H-SiC with High Growth Rate Using CH3Cl and SiCl4 Chlorinated Growth Precursors

Siva Kotamraju, Y. Koshka, B. Krishnan, 2010 .

Generation of Defects in Heavily Al-Doped 4H-SiC Epitaxial Layers Grown by the Low-Temperature Halo-Carbon Method

Siva Kotamraju, H. Das, Y. Koshka, 2010 .

Low-temperature homoepitaxial growth of 4H-SiC with CH3Cl and SiCl4 precursors

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2010 .

Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth

Siva Kotamraju, G. Melnychuk, J. N. Merrett, 2010 .

Use of chlorinated carbon and silicon precursors for epitaxial growth of 4H‐SiC at very high growth rates

Siva Kotamraju, Y. Koshka, B. Krishnan, 2009 .

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

Siva Kotamraju, G. Melnychuk, Y. Koshka, 2009 .

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method

G. Melnychuk, H. Das, Y. Koshka, 2008 .

Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

H. Das, Y. Koshka, B. Krishnan, 2007 .

Selective epitaxial growth of 4H-SiC at reduced temperatures using halo-carbon precursor

H. Das, Y. Koshka, B. Krishnan, 2006 .

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs

Michael S. Mazzola, John D. Cressler, Yaroslav Koshka, 2005 .

Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates

A. Davydov, I. Levin, S. Sundaresan, 2011 .

Silicon carbide nanowires grown on 4H-SiC substrates by chemical vapor deposition

Siva Kotamraju, S. Sundaresan, H. Issa, 2009 .

SiC nanowire vapor–liquid–solid growth using vapor-phase catalyst delivery

A. Davydov, J. N. Merrett, Y. Koshka, 2013 .

Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates

A. Davydov, I. Levin, S. Sundaresan, 2012 .

Growth on Differently Oriented Sidewalls of SiC Mesas As a Way of Achieving Well-Aligned SiC Nanowires

A. Davydov, J. N. Merrett, Y. Koshka, 2012 .

Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques

Y. Koshka, B. Krishnan, S. K. Chanda, 2007 .

Nanosecond Laser Anneal for BEOL Performance Boost in Advanced FinFETs

M. Gribelyuk, J. Mody, J. Liu, 2018, 2018 IEEE Symposium on VLSI Technology.

Recombination-induced athermal migration of hydrogen and deuterium in SiC

Y. Koshka, B. Krishnan, 2005 .

Non-metastable recombination induced reactions involving hydrogen in SiC

M. Mazzola, Y. Koshka, B. Krishnan, 2004 .

A 7nm CMOS technology platform for mobile and high performance compute application

J. Zeng, S. Samavedam, B. Senapati, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications

Siva Kotamraju, Y. Koshka, B. Krishnan, 2012 .

Experimental investigation and manufacturing solution of the rapid thermal process induced overlay residue

O. Vatel, P. Benyon, B. Krishnan, 2012, 2012 SEMI Advanced Semiconductor Manufacturing Conference.

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

G. Melnychuk, Y. Koshka, B. Krishnan, 2010 .

Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method

A. Henry, O. Kordina, Siva Kotamraju, 2012 .

Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3Cl Growth Precursor

G. Melnychuk, Y. Koshka, B. Krishnan, 2006 .