Z. Q. Wang

Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters.

X. T. Zhang, Y. Liu, Y C Liu, 2013, Nanoscale.

Localized resistive switching in a ZnS–Ag/ZnS double-layer memory

Y. Liu, X. N. Zhao, J. G. Ma, 2014 .

Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film

Y. C. Liu, Y. Liu, X. Zhang, 2010 .

Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

X. T. Zhang, Y. Liu, H. Xu, 2011, IEEE Electron Device Letters.