C. Mériadec

发表

GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth

I. Sagnes, G. Patriarche, J. Harmand, 2000 .

Black Silicon Photoanodes Entirely Prepared with Abundant Materials by Low-Cost Wet Methods

V. Dorcet, B. Fabre, S. Ababou‐Girard, 2019, ACS Applied Energy Materials.

SURFACE MECHANISMS IN THE UVCVD OF SiO2 FILMS

E. Petit, C. Licoppe, J. Flicstein, 1991 .

Direct measurement of solid‐phase epitaxial growth kinetics in GaAs by time‐resolved reflectivity

C. Licoppe, Y. Nissim, C. Mériadec, 1985 .

Recrystallization kinetics pattern in III‐V implanted semiconductors

C. Licoppe, P. Hénoc, Y. Nissim, 1987 .

Evidence for a transitory composition pattern in the early stages of the photochemical deposition of silica films on semiconductors

Christian Licoppe, Yves Nissim, J. Flicstein, 1991 .

A combination of rapid thermal processing and photochemical deposition for the growth of SiO2 suitable for InP device applications

J. Flicstein, Y. I. Nissim, C. Licoppe, 1990 .

UV annealing of low temperature photodeposited SiO2 films with a new powerful lamp source

J. Flicstein, C. Licoppe, J. Flicstein, 1992 .

Interface structure evolution and impurity effects during solid‐phase‐epitaxial growth in GaAs

C. Licoppe, P. Krauz, Y. Nissim, 1986 .

In Situ Processing of InP by Flash LPCVD for Surface Preparation and Gate Oxide Deposition

C. Licoppe, J. Moison, Y. Nissim, 1988, ESSDERC '88: 18th European Solid State Device Research Conference.