Kai-hsuan Lee

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics

S. Chang, P. Chang, Kai-hsuan Lee, 2013 .

Graphene as tunable transparent electrode material on GaN: Layer-number-dependent optical and electrical properties

S. Gwo, Hung-Ying Chen, Lo-Yueh Chang, 2013 .

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

S. Chang, P. Chang, Sheng-Po Chang, 2013 .

Effect of surface modification by self-assembled monolayer on the ZnO film ultraviolet sensor

S. Chang, P. Chang, Sheng-Po Chang, 2013 .

InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers

S. Chang, P. Chang, San-Lein Wu, 2011, IEEE Journal of Quantum Electronics.

Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

S. Chang, P. Chang, Y. Su, 2012 .

Epitaxial Growth of InN Nanorods on Nitridated Chromium Nanoislands under the In-rich Regime

S. Chang, P. Chang, Sheng-Po Chang, 2013, International Journal of Electrochemical Science.