B. Mauduit

发表

Crystallization of amorphous thin LPCVD Si films: “in situ” TEM measurement of nucleation and grain growth rates

J. P. Guillemet, E. Scheid, B. Pieraggi, 1993 .

Kinetic Study Of Crystallisation In Amorphous Thin Lpcvd Si Films

J. P. Guillemet, B. Pieraggi, B. Mauduit, 1993 .

Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si2H6 and Annealing

E. Scheid, D. Bielle-daspet, B. Mauduit, 1990 .

Crystallization of amorphous thin low pressure chemical vapour deposition silicon films: in situ TEM measurement of grain growth rates

J. P. Guillemet, E. Scheid, B. Pieraggi, 1993 .

High voltage electron irradiation (1 MV, 2 MV) of prestrained InSb single crystals

F. Reynaud, M. Fnaiech, B. Mauduit, 1985 .

Characterization of extended defects in SiGe alloys formed by high dose Ge+ implantation into Si

A. Claverie, F. Cristiano, P. Hemment, 1996 .

Studies of the dislocation loops produced in III–V semiconducting compounds of B3 structure by irradiation in a high voltage electron microscope

F. Reynaud, B. Mauduit, 1985 .

Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon films from silane and boron trichloride

R. Berjoan, B. Caussat, E. Scheid, 2004 .

On the high-temperature stress-induced spreading of superlattice intrinsic stacking faults in γ' nickel-based single crystals

P. Lours, A. Coujou, B. Mauduit, 1990 .

Thermal evolution of extended defects in implanted Si

B. Colombeau, A. Claverie, B. Colombeau, 2000 .

Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers

A. Claverie, D. Alquier, Augustin Martinez, 1996 .

Identification of EOR defects due to the regrowth of amorphous layers created by ion bombardment

A. Claverie, L. Laânab, C. Bergaud, 1994 .

Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

A. Claverie, D. Mathiot, G. Assayag, 1999 .

TRANSIENT ENHANCED DIFFUSION OF BORON IN PRESENCE OF END-OF-RANGE DEFECTS

A. Claverie, D. Alquier, Augustin Martinez, 1997 .

Formation energies and relative stability of perfect and faulted dislocation loops in silicon

A. Claverie, N. Cowern, F. Cristiano, 2000 .

Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon

A. Claverie, F. Cristiano, B. Colombeau, 2001 .

Formation of Prismatic Loops Induced by in situ Straining of the γ′ Phase of a Nickel Base Superalloy

P. Lours, D. Caillard, N. Clément, 1989 .

Ion beam synthesis of GaN precipitates in GaAs

A. Claverie, C. Bonafos, G. Assayag, 2002 .

Resonant Raman scattering in polycrystalline silicon thin films

Vincent Paillard, Brigitte Caussat, P. Temple-Boyer, 1998 .

TEM studies of the defects introduced by ion implantation in SiC

A. Claverie, T. Billon, C. Bourgerette, 1999 .

Structural and technological properties of heavily in situ phosphorus-doped low pressure chemically vapour deposited silicon films

B. Pieraggi, D. Bielle-daspet, B. Mauduit, 1989 .

Ion beam induced defects in crystalline silicon

N. Cherkashin, A. Claverie, F. Cristiano, 2004 .

Extended defects in shallow implants

A. Claverie, F. Cristiano, B. Colombeau, 2003 .

TEM measurement of hydrogen pressure within a platelet

A. Claverie, R. E. Kroon, G. Assayag, 2001 .

Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling

A. Claverie, F. Cristiano, B. Colombeau, 2001 .