E. Mura

Early stages of InP nanostructure formation on AlInAs

D. Vvedensky, A. Zangwill, A. Gocalinska, 2020 .

Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop”

A. Gocalinska, E. Pelucchi, G. Juska, 2017, 1703.07296.

Three-dimensional Self-assembled Columnar Arrays of AlInP Quantum Wires for Polarized Micron-sized Amber Light Emitting Diodes

B. Corbett, E. O’Reilly, A. Gocalinska, 2018, 1802.03959.

Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices

Gunther Roelkens, Brian Corbett, Emanuele Pelucchi, 2017 .

Next generation low temperature polycrystalline materials for above IC electronics. High mobility n- and p-type III–V metalorganic vapour phase epitaxy thin films on amorphous substrates

P. Hurley, Michael Schmidt, A. Gocalinska, 2020, Journal of Physics: Photonics.

High Hole Mobility Polycrystalline GaSb Thin Films

P. Hurley, Michael Schmidt, A. Gocalinska, 2021, Crystals.

Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

P. Hurley, A. Gocalinska, E. Pelucchi, 2021, Crystals.

Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs

B. Corbett, J. O'Callaghan, A. Gocalinska, 2021, 2103.08267.

Shape evolution and emission property of InP nanostructures under hydrides influence

A. Gocalinska, E. Pelucchi, G. Juska, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs

Q. Ramasse, A. Gocalinska, E. Pelucchi, 2023, Journal of Materials Science.

MOVPE metamorphic lasers and nanostructures engineering at telecom wavelengths

E. Mura, 2019 .