S. Stoyanov

发表

S. Stoyanov, 1974 .

Electromigration Induced Step Bunching on Si Surfaces – How Does it Depend on the Temperature and Heating Current Direction?

S. Stoyanov, 1991 .

Nucleation in Solid Solution Stimulated by Non-Equilibrium Electrons. II. Electronic Model

D. Kashchiev, S. Stoyanov, M. Geoegiev, 1970 .

Molecular Dynamics Simulation of a Cluster Motion on Foreign Substrate

S. Stoyanov, 1980 .

Recent investigations on nucleation and crystal growth processes

D. Kashchiev, S. Stoyanov, R. Kaischew, 1981 .

Resonance-induced cluster-mobility: Dynamics of a finite Frenkel-Kontorova model

S. Stoyanov, H. Ml̈ler-Krumbhaar, 1985 .

Surface Diffusion Coefficients on Stranski-Krastanov Layers

M. Zinke–Allmang, S. Stoyanov, 1990 .

On the atomistic theory of nucleation rate

S. Stoyanov, 1973 .

Mechanisms of epitaxial growth

I. Markov, S. Stoyanov, 1987 .

Revealing electromigration on dielectrics and metals through the step-bunching instability

I. Shvets, V. Semenov, S. Bozhko, 2020, Physical Review B.

On the theory of epitaxial growth

S. Stoyanov, 1986 .

On the 2D-3D transition in epitaxial thin film growth

I. Markov, S. Stoyanov, 1982 .

Design of atomic step networks on Si(111) through strain distribution control

T. Ogino, Y. Homma, H. Omi, 2004 .

Atomistic theory of electrolytic nucleation: I

A. Milchev, S. Stoyanov, R. Kaischev, 1974 .

On some probabilistic aspects of the nucleation process

A. Milchev, S. Stoyanov, S. Toschev, 1972 .

Classical and atomistic models of electrolytic nucleation

A. Milchev, S. Stoyanov, 1976 .

Surface diffusion and two-dimensional nucleation around atomic steps during molecular beam epitaxial growth

M. Ichikawa, S. Stoyanov, H. Nakahara, 1995 .

Antiband instability on vicinal Si(111) under the condition of diffusion-limited sublimation

I. Shvets, S. Stoyanov, C. Coileáin, 2012 .

Instability of vicinal crystal surfaces with transparent steps: Transient kinetics and non-local electromigration

B. Ranguelov, S. Stoyanov, 2009 .

Size-scaling exponents of current-induced step bunching on silicon surfaces

M. Ichikawa, K. Fujita, S. Stoyanov, 1999 .

Properties and dynamic interaction of step density waves at a crystal surface during electromigration affected sublimation

S. Stoyanov, Vesselin Dimitrov Tonchev, 1998 .

Electromigration of si Adatoms on si Surfaces: A Key to Understanding Step Bunching Instabilities During Sublimation and Mbe Growth

J. Métois, S. Stoyanov, Vesselin Dimitrov Tonchev, 2002 .

Electric Current Induced Asymmetry of Surface Diffusion - Instability of Vicinal Crystal Surfaces

J. Métois, S. Stoyanov, Vesselin Dimitrov Tonchev, 2001 .

Current-induced step bunching at vicinal surfaces during crystal sublimation

S. Stoyanov, 1997 .

Heating Current Induced Conversion between 2×1 and 1×2 Domains at Vicinal (001) Si Surfaces–Can it be Explained by Electromigration of Si Adatoms?

S. Stoyanov, 1990 .

High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces

S. Stoyanov, Masakazu Ichikawa Masakazu Ichikawa, Takahisa Doi Takahisa Doi, 1993 .

Step-Bunching Instabilities of Vicinal Surfaces During Growth and Sublimation of Crystals – the Role of Electromigration of Adatoms

S. Stoyanov, 2011, NAS 2011.

New development in the theory of MBE growth of Si: a confrontation with experiment

S. Stoyanov, 1992 .

Instabilities at vicinal crystal surfaces: Competition between electromigration of adatoms and kinetic memory effect

B. Ranguelov, S. Stoyanov, 2007, 0712.0749.

Scaling properties of step bunches induced by sublimation and related mechanisms

J. Krug, A. Pimpinelli, S. Stoyanov, 2004, cond-mat/0409013.

Impact of the growth on the stability–instability transition at Si (111) during step bunching induced by electromigration

J. Métois, S. Stoyanov, 1999 .

Microprobe RHEED and SREM studies of Si MBE on Ga-adsorbed Si(111) surface

M. Ichikawa, S. Stoyanov, H. Nakahara, 1993 .

Step density waves on growing vicinal crystal surfaces - Theory and experiment

B. Ranguelov, J. Métois, P. Müller, 2017 .

Step flow growth of vicinal (111)si surface at high temperatures: step kinetics or surface diffusion control

J. Heyraud, J. Métois, S. Stoyanov, 2001 .

Current induced bunches of steps on the Si(111) surface – a key to measuring the temperature dependence of the step interaction coefficient

J. Métois, S. Stoyanov, Vesselin Dimitrov Tonchev, 2000 .

On the interpretation of the RHEED intensity oscillations during the growth of vicinal faces

S. Stoyanov, 1990 .

Step edge barriers versus step edge relaxation in GaAs:Sn molecular beam epitaxy

P. Cohen, S. Seutter, A. Dabiran, 1999 .

Molecular beam epitaxy with synchronization of nucleation

O. Pchelyakov, V. Markov, L. Sokolov, 1991 .

New type of step bunching instability at vicinal surfaces in crystal evaporation affected by electromigration

S. Stoyanov, 1998 .

Formation of Bilayer Steps During Growth and Evaporation of Si(001) Vicinal Surfaces

S. Stoyanov, 1990 .

Non-steady state effects in MBE: Oscillations of the step density at the crystal surface

S. Stoyanov, M. Michailov, S. Stoyanov, 1988 .

Evaporation and growth of crystals: Propagation of step-density compression waves at vicinal surfaces

B. Ranguelov, S. Stoyanov, 2007, physics/0703265.

Selective growth of nanometer-scale Ga dots on Si(111) surface windows formed in an ultrathin SiO 2 film

M. Ichikawa, Motoshi Shibata, S. Stoyanov, 1999 .

Layer growth of epitaxial films and superlattices

S. Stoyanov, 1988 .