A. G. Dentai

发表

High-speed operation of InP/InGaAsP/InGaAs avalanche photodiodes

Joe C. Campbell, Bryon L. Kasper, Joe C. Campbell, 1984 .

Performance of 1.5-µm l/4-shifted DFB-SIPBH laser diodes with electron-beam-defined and reactive ion etched gratings

Chung-En Zah, S. G. Menocal, F. J. Favire, 1989 .

High-voltage (2.1 V) integrated InGaAs photogenerator

Clinton Randy Giles, C. A. Burrus, A. G. Dentai, 1997 .

High-speed digital lightwave communication using LEDs and PIN photodiodes at 1.3 μm

C. A. Burrus, A. Albanese, A. G. Dentai, 1980, The Bell System Technical Journal.

Science and technology challenges in XXIst century optical communications

S. Bigo, F. Poletti, M. N. Petrovich, 2011 .

Small area ingaas/inp p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 mb/s and 45 mb/s lightwave receivers at 1.31 μm wavelength

K. Ogawa, A. G. Dentai, C. A. Burrus, 1980 .

15 Gbit/s pin/HBT optoelectronic integrated photoreceiver module realised using MOVPE material

Sethumadhavan Chandrasekhar, L. M. Lunardi, Alan H. Gnauck, 1995 .

InP/InGaAs heterojunction phototransistors

C. A. Burrus, Joe C. Campbell, A. G. Dentai, 1981 .

Wavelength‐multiplexed AND gate: A building block for monolithic optically coupled circuits

Joe C. Campbell, A. G. Dentai, John A. Copeland, 1981 .

120 km lightwave transmission experiment at 1 Gbit/s using a new long-wavelength avalanche photodetector

Ivan P. Kaminow, Joe C. Campbell, A. G. Dentai, 1984 .

Avalanche buildup time of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions

Joe C. Campbell, A. G. Dentai, W. S. Holden, 1986 .

Lateral confinement InGaAsP superluminescent diode at 1.3 µm

Ivan P. Kaminow, Gadi Eisenstein, A. G. Dentai, 1983 .

Material-dispersion-limited operation of high-bit-rate optical-fibre data links using l.e.d.s

W. M. Muska, Tingye Li, A. G. Dentai, 1977 .

Improved Two Wavelength Demultiplexing InGaAsP Photodetector

C. A. Burrus, Joe C. Campbell, A. G. Dentai, 1980, Integrated and Guided Wave Optics.

Avalanche InP/InGaAs heterojunction phototransistor

Joe C. Campbell, A. G. Dentai, G. J. Qua, 1983 .

Carrier capture times in 1.5 μm multiple quantum well optical amplifiers

Gregory Raybon, C. A. Burrus, Uziel Koren, 1992 .

InP/InGaAs heterojunction phototransistor with integrated light emitting diode

Joe C. Campbell, A. G. Dentai, 1982 .

Narrowband GaInAsP/InP waveguide grating-folded directional coupler multiplexer/demultiplexer

Lawrence L. Buhl, A. G. Dentai, C. H. Joyner, 1988 .

2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density

John Lehrer Zyskind, Catherine Caneau, A. G. Dentai, 1987 .

Monolithic integrated waveguide photodetector

Sethumadhavan Chandrasekhar, Joe C. Campbell, A. G. Dentai, 1987 .

1.1 Gb/s pseudorandom pulse-code modulation of 1.27 μm wavelength c.w. InGaAsP/InP d.h. lasers

W. M. Muska, A. G. Dentai, S. M. Abbott, 1978 .

4 Gbit/s pin/HBT monolithic photoreceiver

Sethumadhavan Chandrasekhar, Alan H. Gnauck, A. G. Dentai, 1990 .

Very-high-speed back-illuminated InGaAs/InP PIN punch-through photodiodes

K. Ogawa, A. G. Dentai, C. Burrus, 1981 .

Improved frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions

Joe C. Campbell, A. G. Dentai, W. S. Holden, 1985 .

Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μm

C. A. Burrus, A. G. Dentai, C. Burrus, 1977 .

InGaAs/InP p-i-n photodiodes for lightwave communications at the 0.95-1.65 µm wavelength

C. A. Burrus, A. G. Dentai, C. Burrus, 1981 .

Small-area high-speed InP/InGaAs phototransistor

K. Ogawa, C. A. Burrus, Joe C. Campbell, 1981 .

Optically induced catastrophic degradation in InGaAsP/InP layers

Henryk Temkin, A. G. Dentai, M. A. DiGiuseppe, 1982 .

Controlled Nonlinearity Monolithic Integrated Optoelectronic Mixing Receiver

U. Koren, Gregory Raybon, C. A. Burrus, 1993 .

Performance of 1.5 mu m lambda /4-shifted DFB-SIPBH laser diodes with electron beam defined and reactive ion-etched gratings

S. G. Menocal, F. J. Favire, Catherine Caneau, 1989 .

Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption "grading" and multiplication regions

Joe C. Campbell, A. G. Dentai, W. S. Holden, 1985 .

Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μm

John Lehrer Zyskind, C. Caneau, A. G. Dentai, 1985 .

A comparison of ’’normal’’ lasers and lasers exhibiting light jumps

Joe C. Campbell, A. G. Dentai, S. M. Abbott, 1980 .

Nd:YAG single‐crystal fiber laser: Room‐temperature cw operation using a single LED as an end pump

A. G. Dentai, B. I. Miller, C. A. Burrus, 1976 .

Balanced dual photodiodes integrated with a 3 dB directional coupler for coherent lightwave receivers

F. G. Storz, Sethumadhavan Chandrasekhar, Joe C. Campbell, 1988 .

Dual wavelength surface emitting InGaAsP l.e.d.s

C. A. Burrus, A. G. Dentai, Tien-Pei Lee, 1980 .

High avalanche gain in small-area InP photodiodes

C. A. Burrus, A. G. Dentai, C. Burrus, 1979 .

Monolithic balanced p-i-n/HBT photoreceiver for coherent optical heterodyne communications

Sethumadhavan Chandrasekhar, Bernard Glance, A. G. Dentai, 1991 .