Y. Qiao

Interband transition in surface delta-doped GaAs studied by photo-reflectance

M. Willander, W. Lu, Y. Fu, 1998, 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140).

Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

J. Chu, Y. Gui, M. Yu, 1999 .

Infrared photoconductor fabricated with a molecular beam epitaxially grown CdTe/HgCdTe heterostructure

M. Yu, S. Yuan, Li He, 1991 .

A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe

Jianrong Yang, Ruijun Ding, Weizheng Fang, 1997 .

As-doping HgCdTe by MBE

Jun Wu, Yimin Qiao, Meifang Yu, 2005, SPIE/COS Photonics Asia.

Photoreflection spectrum on Si-surface-delta-doped GaAs

Wei Lu, Magnus Willander, Xiaoshuang Chen, 1999, Photonics West.

Direct observation of above-quantum-step quasibound states in GaAs/Al x Ga 1-x As/vacuum heterostructures

M. Willander, X. Liu, W. Lu, 1998 .