T. S. Kang

Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

T. S. Lee, T. Yoon, Quanli Hu, 2018 .

Resistive switching characteristics of Ag/MnO/CeO2/Pt heterostructures memory devices

T. Yoon, Quanli Hu, C. Kang, 2018 .

Forming-free resistive switching characteristics in manganese oxide and hafnium oxide devices

Chi Jung Kang, Tae-Sik Yoon, Jaewan Kim, 2019, Japanese Journal of Applied Physics.

Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure

T. Yoon, Quanli Hu, C. Kang, 2018 .

Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices

Chi Jung Kang, Tae-Sik Yoon, Yawar Abbas, 2018 .

Forming-free resistive switching characteristics of manganese oxide and cerium oxide bilayers with crossbar array structure

Jaewan Kim, T. Yoon, Quanli Hu, 2018, Japanese Journal of Applied Physics.