B. Wagner

发表

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (1 1 2¯ 0)

D. Batchelor, R. Davis, Z. Liliental-Weber, 2007 .

Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides.

M. Dudley, J. Bai, X. Huang, 2005, Physical review letters.

Preparation and characterization of atomically clean, stoichiometric surfaces of AIN(0001)

C. Pandarinath, R. Davis, R. Nemanich, 2005 .

Structural TEM study of nonpolar a-plane gallium nitride grown on (112_0) 4H-SiC by organometallic vapor phase epitaxy

Robert F. Davis, Edward A. Preble, D. N. Zakharov, 2005 .

Growth and Characterization of Epitaxial GaN Thin Films on 4H-SiC (11.0) Substrates

R. Davis, Z. Liliental-Weber, D. Zakharov, 2003 .

Ge thin-films with tantalum diffusion-barriers for use in Nb-based superconductor technology

N. Newman, D. Queen, S. Zhang, 2021, 2104.12580.

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

R. Davis, M. Dudley, J. Bai, 2005 .

Relationship of basal plane and prismatic stacking faults in GaN to low temperature photoluminescence peaks at ∼3.4 eV and ∼3.2 eV

R. Dupuis, R. Davis, M. Dudley, 2004 .

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

R. Dupuis, R. Davis, M. Dudley, 2005 .

TEM studies of laterally overgrown GaN layers grown in polar and non-polar directions

Z. Liliental-Weber, D. Zakharov, B. Wagner, 2006, SPIE OPTO.

Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

A. Henry, E. Janzén, R. Davis, 2004 .

Growth and characterization of pendeo-epitaxial GaN(112¯0) on 4H–SiC(112¯0) substrates

R. Davis, Z. Liliental-Weber, Z. Reitmeier, 2006 .

Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films

A. Henry, R. Davis, C. Hallin, 2004 .