A. Basak

Momentum relaxation effects in 2D-Xene field effect device structures

B. Muralidharan, A. Basak, P. Brahma, 2021, Journal of Physics D: Applied Physics.

On the Subthreshold Performance of Topological Insulator Field Effect Transistors under Momentum Relaxation Scattering

Sagnik Banerjee, B. Muralidharan, A. Basak, 2022, 2022 IEEE 22nd International Conference on Nanotechnology (NANO).

Robust Subthermionic Topological Transistor Action via Antiferromagnetic Exchange

M. Fuhrer, D. Culcer, Sagnik Banerjee, 2022, Physical Review Applied.

Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance

N. Jain, S. Manhas, Ashwani Kumar, 2014, IEEE Transactions on Nanotechnology.

Theoretical insights into the electronic and magnetic behaviors of the metal substituted 1H-MoS2 systems: Their potential towards CO adsorption and sensing

K. Chattopadhyay, D. Das, Dipayan Sen, 2014 .