C. Ascheron

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Topics in Applied Physics Managing Editors Assistant Editor Theory of Defects in Semiconductors Marker-method Calculations for Electrical Levels Using Gaussian-orbital Basis Sets Quasiparticle Calculations for Point Defects at Semiconductor Surfaces Multiscale Modeling of Defects in Semiconductors:

David Alan Drabold, S. Estreicher, C. Ascheron, 2006 .

Positron Study of Vacancy Defects in Proton and Neutron Irradiated GaP, InP, and Si

G. Dlubek, R. Krause, C. Ascheron, 1988, March 16.

The Proton-induced kossel effect and its application to crystallographic studies

V. Geist, C. Ascheron, 1984 .

A study of proton bombardment induced swelling of GaP single crystals

A. Schindler, C. Ascheron, G. Otto, 1985 .

Investigations of Hydrogen Implanted GaP Single Crystals by Means of Particle Induced γ‐Spectroseopy, Infrared Spectroscopy, and Rutherford Backscattering Channelling Technique

V. Riede, H. Sobotta, C. Ascheron, 1985 .

A comparative study of swelling, strain and radiation damage of high-energy proton-bombarded GaAs, GaP, InP, Si and Ge single crystals

R. Flagmeyer, A. Schindler, C. Ascheron, 1989 .

Localized vibrational modes in proton and deuteron implanted GaP single crystals

V. Riede, H. Sobotta, H. Neumann, 1990 .

The effect of hydrogen implantation induced stress on GaP single crystals

P. Paufler, H. Bartsch, A. Setzer, 1987 .

Damage profile on high energy ion implanted GaP

R. Flagmeyer, H. Zschau, C. Ascheron, 1986 .

Swelling, Strain, and Radiation Damage of He+ Implanted GaP

R. Flagmeyer, A. Schindler, C. Ascheron, 1986 .

In-situ determination of lattice expansion in proton-bombarded GaP single crystals

V. Geist, R. Flagmeyer, C. Ascheron, 1981 .

Hydrogen-induced localized vibrational mode in proton implanted ZnSe single crystals

V. Riede, H. Sobotta, B. Novikov, 1987 .

Characterization of Irradiation‐Induced Lattice Disorder by Dilatometric Measurements

R. Flagmeyer, A. Schindler, C. Ascheron, 1989 .

Heavy-ion induced damage of binary semiconductors GaP and PbS

S. Platonov, O. A. Yuminov, S. Karamian, 1993 .

Low-damage surface processing by gas cluster ion beams

I. Yamada, J. Matsuo, G. Takaoka, 1995 .

Sputtering effect of gas cluster ion beams

I. Yamada, J. Matsuo, G. Takaoka, 1995 .

Hydrogen depth profiling in bevelled proton-implanted semiconductors by 4He ERDA and 19F NRA

F. Bigl, D. Lehmann, C. Neelmeijer, 1992 .

Gettering of copper to hydrogen‐induced cavities in silicon

R. Elliman, J. Wong-Leung, M. Petravić, 1995 .

Defect Evolution in Hydrogen Implanted Silicon

J. Wong-Leung, M. Petravić, C. Ascheron, 1996 .

Study of proton-bombardment-induced radiation damage in elemental and compound semiconductors by RBS channeling

J. Biersack, F. Pászti, N. Q. Khánh, 1992 .

Proton Beam Modification of Selected AIIIBVCompounds

C. Ascheron, 1991 .

Characterization of the Microhardness of Ion‐implanted GaP

G. Kühn, H. Neumann, C. Ascheron, 1991 .

Study of radiation damage on proton‐bombarded GaP by PIXE

J. Vogt, R. Flagmeyer, H. Frey, 1987 .

Frequency measurement and control : advanced techniques and future trends

A. Luiten, H. Kolsch, C. Ascheron, 2001 .

Influence of ionization processes on radiation defect formation

J. Biersack, J. Erxmeyer, C. Ascheron, 1993 .

Determination of the crystallographic polarity of {111}-InP crystals by the kossel technique and chemical etching

V. Geist, V. Gottschalch, C. Ascheron, 1983 .

WorldWide ElectroActive Polymers EAP ( Artificial Muscles ) Newsletter July 2000

C. Ascheron, 2001 .

Hydrogen incorporation behaviour and radiation damage in proton bombarded InP single crystals

V. Riede, H. Sobotta, H. Neumann, 1990 .

Infrared Study of Proton Implanted GaP Single Crystals

M. Nobes, V. Riede, H. Sobotta, 1988 .

Microhardness of proton bombarded GaP single crystals

G. Dlubek, H. Neumann, R. Krause, 1986 .

Vibrational properties of proton-implanted crystalline InP

V. Geist, V. Riede, H. Sobotta, 1983 .

Microhardness-damage density relationship in proton and helium implanted GaP single crystals

H. Neumann, C. Ascheron, 1986 .

Depth dependence of localized mode absorptions in proton‐implanted InP

V. Riede, H. Sobotta, H. Neumann, 1989 .

Microhardness of ZnSe and its change by proton implantation

G. Kühn, H. Neumann, C. Ascheron, 1989 .

Depth profile of the microhardness in proton-implanted GaP

H. Neumann, C. Ascheron, 1989 .

Depth Profile of the Microhardness in Helium Implanted GaP

H. Neumann, C. Ascheron, 1987, December.

Microhardness of Ion Implated GaP

H. Neumann, C. Ascheron, V. Bugrov, 1987 .

Optical properties of helium implanted inp single crystals

H. Neumann, W. Hörig, C. Ascheron, 1988 .

Infrared absorption of hydrogen in proton‐implanted GaP

V. Geist, V. Riede, H. Sobotta, 1981 .

Near‐edge optical absorption spectra of proton‐implanted GaAs

H. Neumann, W. Hörig, C. Ascheron, 1989 .

Microhardness of Sn-doped InP

G. Kühn, H. Neumann, C. Ascheron, 1989 .