Fei Li

Two-dimensional antiferromagnetic semiconductor T'-MoTeI from first principles

Yanfeng Ge, W. Wan, Yulu Ren, 2021, 2112.15330.

Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

Yuchan Wang, Fei Li, J. Zou, 2009 .

Anisotropic PC6N Monolayer with Wide Band Gap and Ultrahigh Carrier Mobility

Guochun Yang, Cong Wang, A. Bergara, 2020 .

Phonon-limited electronic transport of two-dimensional ultrawide bandgap material h-BeO

Yanfeng Ge, W. Wan, Yong Liu, 2020, 2007.01090.

Strain tunable intrinsic ferromagnetic in 2D square CrBr2

Yanfeng Ge, W. Wan, Yong Liu, 2021, AIP Advances.

MNBr (M = Mo, Cr, V) monolayer: two-dimensional ferromagnetic half-metallic materials with high Curie temperature

Yanfeng Ge, W. Wan, Yong Liu, 2022, Journal of Physics D: Applied Physics.

Two-dimensional antiferromagnetic semiconductor T’-MoTeI from first principles

Yanfeng Ge, W. Wan, Yong Liu, 2021, Journal of physics. Condensed matter : an Institute of Physics journal.