Y. Tomomura

发表

Homoepitaxial growth of low-resistivity-Al-doped ZnS single crystal films by molecular beam epitaxy

Akira Suzuki, Shigeo Nakajima, Masahiko Kitagawa, 1989 .

Homoepitaxial growth of ZnS single crystal thin films by molecular beam epitaxy

A. Suzuki, S. Nakajima, M. Kitagawa, 1990 .

Schottky barrier heights of contact metals to p-type ZnSe

N. Teraguchi, T. Kawakami, Y. Koide, 1998 .

Schottky barrier heights of metals contacting to p-ZnSe

N. Teraguchi, T. Kawakami, Y. Koide, 1997 .

Effects of surface cleaning on electrical properties for Ni contacts to p‐type ZnSe

N. Teraguchi, Y. Koide, M. Murakami, 1996 .

Growth of ZnS by Metalorganic Chemical Vapor Deposition

A. Sasaki, S. Fujita, Y. Tomomura, 1983 .

Luminescence properties of blue La1−xCexAl(Si6−zAlz)(N10−zOz) (z∼1) oxynitride phosphors and their application in white light-emitting diode

R. Xie, N. Hirosaki, Kohsei Takahashi, 2007 .

On the origin of fine structure in the photoluminescence spectra of the β-sialon:Eu2+ green phosphor

Takashi Takeda, Naoto Hirosaki, Rong-Jun Xie, 2012, Science and technology of advanced materials.

Photo-assisted homoepitaxial growth of ZnS by molecular beam epitaxy

A. Suzuki, S. Nakajima, M. Kitagawa, 1990 .

Dependence of Electrical Properties on Work Functions of Metals Contacting to p-type ZnSe

Masayoshi Koike, Seiji Nagai, Shiro Yamasaki, 1996 .

Molecular-beam epitaxy of (Al)GaAsN using ammonia as the nitrogen source

Koji Takahashi, H. Kawanishi, H. Ikeda, 2001 .

Growth of ZnSe/MgS strained‐layer superlattices by molecular beam epitaxy

N. Teraguchi, J. Rorison, H. Taniguchi, 1995 .

Cd-based ohmic contact materials to p-ZnSe

N. Teraguchi, K. Hashimoto, Y. Koide, 1996 .

Optical and electrical properties of new carrier barrier layer structure of II–VI compounds

N. Teraguchi, J. Rorison, A. Suzuki, 1996 .