Guilherme A. S. Ribeiro

发表

Electronic gap stability of two-dimensional tin monosulfide phases: towards optimal structures for electronic device applications

R. Reis, Â. Malachias, R. Magalhães-Paniago, 2022, Applied Surface Science.

Activation of topological insulator phase in kagomé-type bilayers by interlayer coupling: The cases of Ni(CO)4 and Pd(CO)4

O. Silveira, H. Chacham, Guilherme A. S. Ribeiro, 2020 .

Bi2:Bi2Te3 stacking influence on the surface electronic response of the topological insulator Bi4Te3

W. S. Silva, Â. Malachias, R. Magalhães-Paniago, 2020, Electronic Structure.

Temperature-induced coexistence of a conducting bilayer and the bulk-terminated surface of the topological insulator Bi2Te3.

W. S. Silva, Â. Malachias, R. Magalhães-Paniago, 2013, Nano letters.

Origin of the complex Raman tensor elements in single-layer triclinic ReSe2

Jessica S. Lemos, M. Terrones, L. Balicas, 2020, 2D Materials.

A combined LEED and DFT surface structure determination of Cu3Au(001): Evidence of a surface stacking fault

R. Capaz, A. Cotta, E. A. Soares, 2013 .

Electronic Gap Stability of Two-Dimensional Tin Monosulfide Phases: Towards Optimal Structures for Electronic Device Applications

R. Reis, Â. Malachias, R. Magalhães-Paniago, 2022, SSRN Electronic Journal.

Multiple strong topological gaps and hexagonal warping in Bi4Te3

S. Louie, W. S. Silva, R. Magalhães-Paniago, 2022, Physical Review B.

Effects of dimensionality and excitation energy on the Raman tensors of triclinic ReSe 2

Jessica S. Lemos, M. Terrones, L. Balicas, 2021, Journal of Raman Spectroscopy.

Direct observation of large strain through van der Waals gaps on epitaxial Bi2Te3 /graphite: Pseudomorphic relaxation and the role of Bi2 layers on the BixTey topological insulator series

Â. Malachias, C. Pérez, E. Abramof, 2020 .

Mg-Doped GaAs Nanowires with Enhanced Surface Alloying for Use as Ohmic Contacts in Nanoelectronic Devices

Â. Malachias, R. Magalhães-Paniago, D. Bahrami, 2021 .