Roel J. Theeuwes

POx/Al2O3 Stacks for c-Si Surface Passivation: Material and Interface Properties

W. Kessels, L. Black, W. Beyer, 2021, ACS applied electronic materials.

Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells

W. Kessels, B. Macco, B. V. D. van de Loo, 2022, Solar Energy Materials and Solar Cells.

Excellent Passivation of n‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide

W. Kessels, L. Black, P. Bronsveld, 2020, physica status solidi (RRL) – Rapid Research Letters.

Self-aligned local contact opening and n+ diffusion by single-step laser doping from POx/Al2O3 passivation stacks

D. Macdonald, M. Ernst, W. Kessels, 2020 .

POx/Al2O3 stacks for surface passivation of Si and InP

W. Kessels, L. Black, W. Beyer, 2022, Solar Energy Materials and Solar Cells.

Extracting surface recombination parameters of germanium–dielectric interfaces by corona-lifetime experiments

W. Kessels, J. Melskens, B. Macco, 2022, Journal of Applied Physics.

Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks

M. Verheijen, W. Kessels, L. Black, 2021, Journal of Applied Physics.

Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers

M. Verheijen, W. Kessels, J. Melskens, 2021, Journal of Materials Research.