van den Pj Peter Oever

发表

Real time spectroscopic ellipsometry on ultrathin (<50Å) hydrogenated amorphous silicon films on Si(100) and GaAs(100)

W. Kessels, Van de Sanden, van den Pj Peter Oever, 2007 .

Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

W. Kessels, Van de Sanden, J. Gielis, 2008 .

The growth kinetics of silicon nitride deposited from the SiH4-N2 reactant mixture in a remote plasma

W. Kessels, Van de Sanden, van den Pj Peter Oever, 2004 .

Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy

B. Hoex, W. Kessels, Van de Sanden, 2009 .

Density and production of NH and NH2 in an Ar-NH3 expanding plasma jet

W. Kessels, Van de Sanden, D. Schram, 2005 .

Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

Jpm Johan Hoefnagels, W. Kessels, Van de Sanden, 2003 .

N, NH, and NH2 radical densities in a remote Ar-NH3-SiH4 plasma and their role in silicon nitride deposition

W. Kessels, Van de Sanden, D. Schram, 2006 .

Radial cataphoresis in a low-pressure neon-mercury positive column

G. Kroesen, van den Pj Peter Oever, L. Bakker, 2000 .

Real-time study of α-Si:H/c-Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation

B. Hoex, W. Kessels, Van de Sanden, 2008 .

a-Si:H∕c-Si heterointerface formation and epitaxial growth studied by real time optical probes

W. Kessels, Van de Sanden, J. Gielis, 2007 .

Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy

B. Hoex, Van de Sanden, J. Gielis, 2009 .