Hongliang Lu

The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs

Yimen Zhang, Yu-Ming Zhang, Liu Chen, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Abnormal behaviors of Goos–Hänchen shift in hyperbolic metamaterials made of aluminum zinc oxide materials

J. Zhao, Min Xu, Hao Zhang, 2013 .

Characterization of HfO2/Al2O3 gate dielectric nanometer-stacks grown by atomic layer deposition on InAlAs substrates

Hongliang Lu, Li-fan Wu, Yu -Ming Zhang, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Interfacial and electrical characterization of HfO2/Al2O3/InAlAs structures

Yu-Ming Zhang, Hongliang Lu, Li-fan Wu, 2015 .

Capacitance-Voltage Investigation of HfO2/Al2O3 Bilayered High-k Dielectrics on Si Nanomembrane

Yimen Zhang, J. Zhao, Yuming Zhang, 2018, 2018 International Flexible Electronics Technology Conference (IFETC).

Effect of electrical stress on the Al2O3-based 4H-SiC MOS capacitor with a thin SiO2 interface buffer layer

Renxu Jia, Qingwen Song, Yu-Ming Zhang, 2012, IEEE International Conference on Solid-State and Integrated Circuit Technology.

The impact of laser energy, bias and irradiation positions on single event transients of InP HBT

Zhichao Wei, Yu-Ming Zhang, Hongliang Lu, 2020, Journal of Physics D: Applied Physics.

Effect of deep level traps on the I-V and C-V characteristics of InP/InGaAs heterojunction

Yu-Ming Zhang, Hongliang Lu, Yimen Zhang, 2018, 2018 18th International Workshop on Junction Technology (IWJT).

Model of phonon contribution to nonionizing energy loss (NIEL) for InP/InGaAs heterojunction

Yu-Ming Zhang, Yimen Zhang, Xiao-Hong Zhao, 2017, Microelectron. Reliab..

The effect of proton irradiation on the characteristics of InP/InGaAs heterojunction

Hongliang Lu, Yu -Ming Zhang, Yimen Zhang, 2016, IEEE International Conference on Solid-State and Integrated Circuit Technology.