T. Akyol

发表

Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

S. Banerjee, G. Bersuker, J. Yum, 2011 .

Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices

S. Banerjee, G. Bersuker, J. Yum, 2011 .

Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

S. Banerjee, G. Bersuker, J. Yum, 2011 .

Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates

S. Banerjee, G. Bersuker, J. Yum, 2012 .

A study of highly crystalline novel beryllium oxide film using atomic layer deposition

S. Banerjee, G. Bersuker, J. Yum, 2011 .

Protein-Assembled Nanocrystal-Based Vertical Flash Memory Devices with Al2O3 Integration

S. Banerjee, J. Sarkar, D. Shahrjerdi, 2009 .

Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

S. Banerjee, D. Shahrjerdi, E. Tutuc, 2008 .

Vertical Flash memory devices with Protein-assembled Nanocrystal floating gate and A12O3 control oxide

J. Sarkar, D. Shahrjerdi, E. Tutuc, 2008, Device Research Conference.

Vertical Flashmemorydevices withProtein-assembled Nanocrystal floating gate andA1203 control oxide

S. Banerjee, J. Sarkar, D. Shahrjerdi, 2008 .

GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization

S. Banerjee, S. Bank, D. Shahrjerdi, 2007 .

Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric

S. Banerjee, D. Shahrjerdi, E. Tutuc, 2010 .

A comprehensive study of growth techniques and characterization of epitaxial Ge1-xCx (111) layers grown directly on Si (111) for MOS applications

S. Banerjee, D. Shahrjerdi, E. Tutuc, 2008 .