C. Chiang

发表

Interfacial Cleaning Effects in Passivating InSb with Al2O3 by Atomic Layer Deposition

M. C. Chen, Che-Hao Chang, Tzu-Ho Wu, 2008 .

Mesa etching characterization of InSb for high density image array applications

Kow-Ming Chang, C. Chiang, Jiunn-Jye Luo, 2007 .

Effects of Surface Treatments on Interfacial Self-Cleaning in Atomic Layer Deposition of Al2O3 on InSb

J. J. Luo, M. C. Chen, Che-Hao Chang, 2008 .

Characteristics of Cu(In,Ga)Se2 Films Prepared by Atmospheric Pressure Selenization of Cu-In-Ga Precursors Using Ditert-Butylselenide as Se Source

F. Jih, Kuo-Yi Yen, S. Liang, 2012 .

A new attachment for stable control of mercury pressure in the slider LPE of Hg1−xCdxTe

Tai-bor Wu, Y. Pang, C. Chiang, 1988 .

Low temperature LPE of Hg1-xCdxTe from Te-rich solution and its effects

Tai-bor Wu, C. Chiang, 1989 .

Donor-doping effect in the growth of Hg1−xCdxTe heterolayers by slider liquid phase epitaxy

Tianxing Yang, C. Chiang, T. Wu, 1995 .

Activation of boron implanted in Hg0.7Cd0.3Te by high‐temperature annealing

J. Gong, Tai-bor Wu, K. Lam, 1988 .

Temperature dependent VCSEL optical characteristics based on graded AlxGa1-xAs/GaAs distributed Bragg reflectors: reflectivity and beam profile analyses

Wen-Kuan Su, Shiang-Feng Tang, Tzu-Chiang Chen, 2006, SPIE OPTO.

Dark Currents in HgCdTe Photodiodes Passivated with ZnS/CdS

S. Chang, Y. Su, T. Sun, 1999 .

Calculations of bandstructures on the lens and pyramid-shaped InAs quantum dot for confirming the photoluminescence and photoresponse

Shiang-Feng Tang, Tzu-Chiang Chen, Cheng-Der Chiang, 2007, SPIE OPTO.

Study on polished and etched surfaces of polar (111) CdTe by x-ray photoelectron spectroscopy and grazing-incidence x-ray diffraction

Tai-bor Wu, Shu Yang, Y. Pang, 1992 .

Novel integrated readout circuit of variable integration time with background suppression for quantum dot infrared photo-detectors

Tai-Ping Sun, Meng-Lieh Sheu, Yi-Chuan Lu, 2009, Applied Optics and Photonics China.

Surface morphology and photoluminescence of InAs quantum dots grown on [11~0]-oriented streaked islands under ultra-low V/III ratio

T. Nee, R. Lin, Y. Cherng, 2004, IEEE Transactions on Nanotechnology.

Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD

C. Kuo, C. Su, C. Chiang, 2006 .

The investigations of InAs quantum dots overgrown on In0.1Ga0.9As surfactant layer and 10° off-angle (100) GaAs substrate

Cheng Der Chiang, Shiang Feng Tang, Min Yu Hsu, 2007, SPIE Micro + Nano Materials, Devices, and Applications.

Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density

Wen-Kuan Su, Shiang-Feng Tang, Tzu-Chiang Chen, 2006, SPIE OPTO.

Wet Etching Characterization of InSb for Thermal Imaging Applications

Kow-Ming Chang, Kou-Chen Liu, Cheng-Der Chiang, 2006 .