V. Rana

A Manufacturable, Non-Plated, Non-Ag Metallization Based 20.44% Efficient, 243cm2 Area, Back Contacted Solar Cell on 40um Thick Mono-Crystalline Silicon

P. Kapur, M. Moslehi, S. Seutter, 2013 .

Preparation and properties of V‐substituted garnet films for ion‐implanted 1.0‐micron bubble devices with improved high‐temperature propagation

T. Nelson, R. Lecraw, S. Blank, 1982 .

Effect of growth atmosphere on rare‐earth iron garnets grown from PbO‐based fluxes

C. Brandle, V. Fratello, J. Ballintine, 1986 .

Advanced metallization for ULSI applications (formerly workshop on tungsten and other advanced metals for ULSI applications) : proceedings of the conference held October 8-10, 1991, at AT&T Bell Laboratories, Murray Hill, New Jersey, U.S.A., and October 28-30, 1991, Tokyo, Japan

Rajiv V. Joshi, Virendra Vir Singh Rana, 大泊 巌, 1992 .

Selective tungsten on aluminum for improved VLSI interconnects

J. L. Yeh, A. K. Sinha, S. Steenwyk, 1986, 1986 International Electron Devices Meeting.

The effect of V2O5 on the growth and properties of Bi-YIG

L. Luther, S. Licht, V. Rana, 1987 .

High Curie temperature vanadium containing films for 8µm period magnetic bubble devices

R. Lecraw, V. Rana, 1982 .

Investigations into Selective Removal of Silicon Nitride Using Laser for Crystalline Silicon Solar Cells

C. Eberspacher, T. Weidman, C. Lazik, 2008 .