Enrique Miranda

发表

A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

Olivier Faynot, F. Martinez, Francois Lime, 2011 .

Fundamentals and SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices

Jordi Suñé, Enrique Miranda, E. Miranda, 2020 .

BREAKDOWN MODES AND BREAKDOWN STATISTICS OF ULTRATHIN SiO2 GATE OXIDES

Jordi Suñé, Enrique Miranda, David Jiménez, 2001 .

Equivalent Electrical Circuit Model forthePost

Enrique Miranda, J. C. Tinoco, I. Garduno, 2007 .

Offline Training for Memristor-based Neural Networks

José López Vicario, Antoni Morell, Guillem Boquet, 2021, 2020 28th European Signal Processing Conference (EUSIPCO).

Two-step stress method for the dynamic testing of very thin (8 nm) SiO2 films

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1998 .

Nagarajan Raghavan, Jordi Suñé, H.-S. Philip Wong, 2018, Advanced Electronic Materials.

Industrial electrostatics perforation improvement by power controlled discharges

Enrique Miranda, Joan Garcia-Garcia, Carolina Garzon, 2011, 2011 IEEE EUROCON - International Conference on Computer as a Tool.

Simulation of the Breakdown Spots Spatial Distribution in High-K Dielectrics and Model Validation Using the Spatstat Package for R Language

Eamon O'Connor, Enrique Miranda, Paul K. Hurley, 2010 .

Simple method for monitoring the switching activity in memristive cross-point arrays with line resistance effects

Jordi Suñé, Enrique Miranda, J. Muñoz-Gorriz, 2019 .

Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays

Piero Olivo, Cristian Zambelli, Alessandro Grossi, 2016 .

Detection and fitting of the soft breakdown failure mode in MOS structures

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1999 .

A simple, robust, and accurate compact model for a wide variety of complementary resistive switching devices

Jordi Suñé, Mireia Bargallo Gonzalez, Francesca Campabadal, 2021 .

SPICE Modeling of Cycle-to-Cycle Variability in RRAM Devices

Javier Martin-Martinez, Mireia Bargallo Gonzalez, Francesca Campabadal, 2021 .

Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition

Jordi Suñé, Enrique Miranda, Felix Palumbo, 2021, Journal of Low Power Electronics and Applications.

Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition

Jordi Suñé, Enrique Miranda, Felix Palumbo, 2021, 2021 IEEE 12th Latin America Symposium on Circuits and System (LASCAS).

Two-step stress methodology for monitoring the gate oxide degradation in MOS devices

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2001 .

Electrical characterization of the soft breakdown failure mode in MgO layers

Paul K. Hurley, Eamon O'Connor, Scott Monaghan, 2009 .

Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors

Enrique Miranda, David Jimenez, Andrés Godoy, 2010, IEEE Transactions on Electron Devices.

Soft breakdown fluctuation events in ultrathin SiO2 layers

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1998 .

Linear and non-linear conduction regimes in broken down gate oxides

Jordi Suñé, Enrique Miranda, Xavier Oriols, 2001 .

Effects of Ti incorporation on the interface properties and band alignment of HfTaOx thin films on sulfur passivated GaAs

Chandreswar Mahata, C. K. Maiti, Enrique Miranda, 2011 .

Conduction properties of breakdown paths in ultrathin gate oxides

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2000 .

Mesoscopic approach to the soft breakdown failure mode in ultrathin SiO2 films

Jordi Suñé, Enrique Miranda, E. Miranda, 2001 .

Relation between defect generation, stress induced leakage current and soft breakdown in thin (<5 nm) oxides

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2000 .

Analysis of the degradation and breakdown of thin SiO/sub 2/ films under static and dynamic tests using a two-step stress procedure

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2000 .

A thorough investigation of the progressive reset dynamics in HfO2-based resistive switching structures

Jordi Suñé, Fernanda Irrera, P. Lorenzi, 2015 .

$${ SIM}^2{ RRAM}$$SIM2RRAM: a physical model for RRAM devices simulation

Jordi Suñé, Mario Lanza, Enrique Miranda, 2017 .

Experimental Observation and Mitigation of Dielectric Screening in Hexagonal Boron Nitride Based Resistive Switching Devices

Xu Jing, Mario Lanza, Enrique Miranda, 2018 .

From dielectric failure to memory function: Learning from oxide breakdown for improved understanding of resistive switching memories

Shibing Long, Ming Liu, Jordi Sune, 2011, 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding.

Stochastic modeling of progressive breakdown in ultrathin SiO2 films

Alessandro Paccagnella, Enrique Miranda, Andrea Cester, 2003 .

Modeling of the switching I-V characteristics in ultrathin (5 nm) atomic layer deposited HfO2 films using the logistic hysteron

Jordi Suñé, Enrique Miranda, Karol Fröhlich, 2015 .

Simulation of thermal reset transitions in resistive switching memories including quantum effects

Jordi Suñé, Mireia Bargallo Gonzalez, Francesca Campabadal, 2014 .

Modeling the breakdown spots in silicon dioxide films as point contacts

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1999 .

Logistic model for leakage current in electrical stressed ultra-thin gate oxides

A. Paccagnella, Enrique Miranda, Andrea Cester, 2003 .

Gate stack insulator breakdown when the interface layer thickness is scaled toward zero

Jordi Suñé, Enrique Miranda, E. Miranda, 2010 .

Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La1/3Ca2/3MnO3/Pt structures using a compact memristive approach

Jordi Suñé, Enrique Miranda, P. Levy, 2017 .

Invited) Elucidating the Origin of Resistive Switching in Ultrathin Hafnium Oxides through High Spatial Resolution Tools

Marc Porti, Gennadi Bersuker, Montserrat Nafría, 2014 .

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

Shibing Long, Ming Liu, Luca Perniola, 2013, IEEE Electron Device Letters.

Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

Xu Jing, Mario Lanza, Enrique Miranda, 2017 .

A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured With the Width-Adjusting Pulse Operation Method

Yang Li, Meiyun Zhang, Hangbing Lv, 2015, IEEE Electron Device Letters.

Consistent model for the voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate Oxides

D. Schroeder, Enrique Miranda, Wolfgang H. Krautschneider, 2004 .

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices

Piero Olivo, Wei Li, Cristian Zambelli, 2018, Scientific Reports.

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

Jordi Suñé, Francesca Campabadal, Xavier Aymerich, 2000 .

Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

Hiroshi Iwai, Kuniyuki Kakushima, C. Dou, 2012 .

Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2001 .

Set Voltage Statistics in Unipolar HfO2-Based RRAM

Jordi Suñé, Hangbing Lv, Shibing Long, 2012 .

Switching events in the soft breakdown I–t characteristic of ultra-thin SiO2 layers

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1999 .

Modeling the breakdown statistics of Al 2 O 3 /HfO 2 nanolaminates grown by atomic-layer-deposition

Jordi Suñé, Francesca Campabadal, Enrique Miranda, 2011 .

Failure physics of ultra-thin SiO2 gate oxides near their scaling limit

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 2000 .

Modeling of the Hysteretic $I{-}V$ Characteristics of ${\rm TiO}_{2}$-Based Resistive Switches Using the Generalized Diode Equation

Enrique Miranda, Juli Blasco, Pablo Levy, 2014, IEEE Electron Device Letters.

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

Jordi Suñé, Shibing Long, Ming Liu, 2013, Scientific Reports.

Soft Breakdown in Ultrathin SiO2 Layers: the Conduction Problem from a New Point of View

Jordi Suñé, Xavier Aymerich, Montserrat Nafría, 1999 .

Post-radiation-induced soft breakdown conduction properties as a function of temperature

Jordi Suñé, Alessandro Paccagnella, Enrique Miranda, 2001 .

Monitoring the degradation that causes the breakdown of ultrathin ( 2 gate oxides

Jordi Suñé, Xavier Aymerich, M. Nafria, 2000 .

Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors

Francesca Campabadal, Enrique Miranda, E. Miranda, 2016, IEEE Transactions on Electron Devices.

Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures

Jordi Suñé, Francesca Campabadal, Shibing Long, 2012 .

Temperature and polarity dependence of the switching behavior of Ni/HfO2-based RRAM devices

Jordi Suñé, Mireia Bargallo Gonzalez, Francesca Campabadal, 2015 .