B. Biasse

发表

New layer transfers obtained by the SmartCut process

F. Fournel, B. Ghyselen, C. Morales, 2003 .

Photoluminescence spectroscopy of direct bonded silica based wafers

G. Pandraud, A. Boukenter, Y. Ouerdane, 1997 .

Crystallographic orientation engineering in silicon-on-insulator substrates

O. Faynot, B. Ghyselen, T. Signamarcheix, 2010 .

High-frequency surface acoustic waves excited on thin-oriented LiNbO/sub 3/ single-crystal layers transferred onto silicon

V. Laude, W. Daniau, B. Aspar, 2007, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

The generic nature of the Smart-Cut® process for thin film transfer

B. Ghyselen, E. Jalaguier, H. Moriceau, 2001 .

Strain compensation effects on the annealing of Ge+-B+-implanted silicon

A. Papon, B. Biasse, A. Ferreiro, 1989 .

New theoretical and experimental results on high frequency surface acoustic waves excited on oriented LiNbO/sub 3/ single crystal layers transferred

V. Laude, W. Daniau, B. Aspar, 2005, IEEE Ultrasonics Symposium, 2005..

New Theoretical and Experimental Results on High Frequency Surface Acoustic Waves Excited on Oriented LiNbO 3 Single Crystal Layers Transferred Onto Silicon.

V. Laude, W. Daniau, B. Aspar, 2005 .

Low-temperature Pyrex glass wafer direct bonding

M. Zussy, Florent Pigeon, B. Biasse, 1995 .

Fabrication of buried corrugated waveguides by wafer direct bonding

G. Pandraud, S. Pelissier, A. Mure-Ravaud, 2000, Journal of Lightwave Technology.

Formation of shallow P+-N junctions by dual Ge+/B+ implantation

R. Truche, J. Pontcharra, A. Papon, 1987 .

Low-energy BF2+ implants

A. Cartier, B. Biasse, Michel Bruel, 1985 .

Bonded planar double-metal-gate NMOS transistors down to 10 nm

M. Vinet, D. Lafond, S. Deleonibus, 2005, IEEE Electron Device Letters.