Hojung Lee

Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ SixNy on AlGaN

T. Jang, Y. Jo, Hwa-Young Ko, 2013 .

Improved on-state resistance with reliable reverse characteristics in 1.2 kV 4H-SiC MOSFET by selective nitrogen implantation assisted current spreading layer

S. Jang, Kyu Sang Kim, Hojung Lee, 2020, Japanese Journal of Applied Physics.