N. Hamao

High‐speed all‐optical switching experiment in Mach–Zehnder configuration using GaAs waveguide

Y. Sugimoto, K. Tajima, S. Nakamura, 1993 .

Solid Solution Hardening of Nickel —Role of Transition Metal and B-subgroup Solutes—

Tomoo Suzuki, Y. Mishima, S. Ochiai, 1986 .

Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures

M. Sugimoto, H. Yokoyama, H. Iwata, 1989 .

Solid Solution Hardening of Ni3Al with Ternary Additions

Tomoo Suzuki, Y. Mishima, S. Ochiai, 1986 .

Surface‐emitting GaAs/AlGaAs lasers with dry‐etched 45° total reflection mirrors

Mitsunori Sugimoto, Kiyoshi Asakawa, T. Yuasa, 1989 .

Indium Composition Dependent Threshold Current Density in Strained InGaAs/AlGaAs Quantum Well Lasers

M. Sugimoto, N. Hamao, Hiroyuki Yokoyama Hiroyuki Yokoyama, 1990, LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting.

Vertical to surface transmission electrophotonic device with selectable output light channels

Kenichi Kasahara, Mitsunori Sugimoto, Tomoo Yanase, 1989 .

Double heterostructure optoelectronic switch as a dynamic memory with low-power consumption

Kenichi Kasahara, Mitsunori Sugimoto, Tomoo Yanase, 1988 .

Reduction in sidewall recombination velocity by selective disordering in GaAs/AlGaAs quantum well mesa structures

M. Sugimoto, H. Yokoyama, S. Kohmoto, 1991 .