Po-Hung Lin

Superlatticed negative differential-resistance heterojunction bipolar transistor

J. Tsai, Wen-Chau Liu, Shiou-Ying Cheng, 1999 .

A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

J. Tsai, L. Laih, Wen-Chau Liu, 1996, 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings.

Influence of the -doping sheet and setback layer on the performance of an InGaP/GaAs heterojunction bipolar transistor

J. Y. Chen, Wen-Chau Liu, H. Pan, 1998 .

Investigation of an AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)

J. Tsai, Wen-Chau Liu, H. Pan, 1998 .

Modeling and analysis of heterostructure-emitter and heterostructure-base transistors (HEHBTs)

J. Y. Chen, J. Tsai, Wen-Chau Liu, 1997 .

On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)

J. Tsai, L. Laih, Wen-Chau Liu, 1996, 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings.

Investigation of step-doped channel heterostructure field-effect transistor

J. Tsai, L. Laih, Wen-Chau Liu, 1996, 1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings.

High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)

L. Laih, Wen-Chau Liu, Po-Hung Lin, 1997 .