K. Yamasaki

Electron velocity enhancement by planar-doped barrier source in GaAs vertical FET

P. Tasker, L. Eastman, W. Schaff, 1988 .

Investigation of hot‐electron injection and ballistic transport using ultrathin planar doped barrier launchers in vertical field effect spectrometer structures

P. Tasker, L. Eastman, W. Schaff, 1992 .

Determination of electron energy distribution in a GaAs vertical field‐effect transistor with hot‐electron injection

P. Tasker, L. Eastman, W. Schaff, 1989 .

Self-align implantation for n+-layer technology (SAINT) for high-speed GaAs ICs

Tomoko Mizutani, T. Mizutani, K. Asai, 1982 .

A high voltage-gain GaAs vertical field-effect transistor with an InGaAs/GaAs planar-doped barrier launcher

P. Tasker, L. Eastman, W. Schaff, 1990, IEEE Electron Device Letters.

Improved performance by optimised planar doped barrier launcher in GaAs vertical FET with very short channel width

P. Tasker, L. Eastman, W. Schaff, 1989 .

Below 20 ps/gate operation with GaAs SAINT FETs at room temperature

Y. Yamane, K. Kurumada, K. Yamasaki, 1982 .