A. Uleckas

发表

In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7 MeV protons irradiation

E. Gaubas, J. Vaitkus, A. Kadys, 2013 .

Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

K. Smith, M. Rahman, A. Zukauskas, 2005 .

Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium

J. Vanhellemont, E. Gaubas, A. Uleckas, 2009 .

Excess carrier dynamics in SiGe ultra-thin layers

E. Simoen, E. Gaubas, A. Uleckas, 2005 .

Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

J. M. Rafí, Deren Yang, J. Vanhellemont, 2012 .

FLUENCE DEPENDENT VARIATIONS OF BARRIER CHARGING AND GENERATION CURRENTS IN NEUTRON AND PROTON IRRADIATED Si PARTICLE DETECTORS

E. Gaubas, T. Ceponis, S. Sakalauskas, 2011 .

Anneal dependent variations of recombination and generation lifetime in neutron irradiated MCZ Si

E. Gaubas, J. Vaitkus, T. Ceponis, 2010 .

Recombination characteristics in 2–3 MeV protons irradiated FZ Si

E. Gaubas, J. Räisänen, J. Vaitkus, 2010 .

Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation

E. Cortina, O. Militaru, E. Gaubas, 2012 .

Barrier Evaluation by Linearly Increasing Voltage Technique Applied to Si Solar Cells and Irradiated Pin Diodes

E. Gaubas, J. Kusakovskij, T. Ceponis, 2012 .

Investigation of the switching and carrier recombination characteristics in the proton irradiated and thermally annealed Si PIN diodes

E. Gaubas, K. Žilinskas, T. Ceponis, 2010 .

Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

E. Gaubas, J. Vaitkus, A. Kadys, 2008 .

Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge

J. Vanhellemont, E. Gaubas, V. Sirutkaitis, 2008 .

In situ analysis of the carrier lifetime in silicon during implantation of 1.5 MeV protons

E. Gaubas, J. Vaitkus, K. Žilinskas, 2010 .

In situ analysis of carrier lifetime and barrier capacitance variations in silicon during 1.5 MeV protons implantation

E. Gaubas, J. Vaitkus, K. Žilinskas, 2011 .

Instrumentation for the in situ control of carrier recombination characteristics during irradiation by protons.

E. Gaubas, J. Vaitkus, P. Tikkanen, 2010, The Review of scientific instruments.

Spectroscopy of neutron irradiation induced deep levels in silicon by microwave probed photoconductivity transients

E. Gaubas, J. Vaitkus, A. Uleckas, 2009 .

ANNEAL-INDUCED VARIATIONS OF THE RECOMBINATION CHARACTERISTICS IN 2 MeV PROTON IRRADIATED Si STRUCTURES

E. Gaubas, J. Višniakov, T. Ceponis, 2008 .

Spectroscopy of metal related levels in Ge by transient infrared and microwave absorption techniques

J. Vanhellemont, E. Gaubas, V. Sirutkaitis, 2008 .

Excess carrier decay peculiarities caused by disorder in dislocation-rich SiGe and GaN layered structures

E. Gaubas, A. Aleknavičius, A. Uleckas, 2005 .