Bing Wang

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

H. Chiu, H. Kuo, Xinnan Lin, 2022, Nanoscale Research Letters.

Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers

E. Fitzgerald, S. Pennycook, S. Gradečak, 2020, Semiconductor Science and Technology.

Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer

C. S. Tan, E. Fitzgerald, J. Michel, 2018, Semiconductor Science and Technology.

A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2021, Journal of Semiconductors.

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2018 .

Control wafer bow of InGaP on 200 mm Si by strain engineering

B. Wang, E. Fitzgerald, J. Michel, 2017 .