C. Meyne

Morphology, surface core-level shifts and surface energy of the faceted GaAs(112)A and (1̄1̄2̄)B surfaces

W. Richter, M. Scheffler, P. Ruggerone, 1999 .

Growth of self-assembled (Zn)CdSe nanostructures on ZnSe by migration enhanced epitaxy

W. Richter, D. Hommel, K. Leonardi, 1999 .

Observation of different growth modes in the MOVPE of CdS/ZnS and CdSe/ZnSe by in-situ reflectance anisotropy spectroscopy

W. Richter, U. W. Pohl, Jh.-T Zettler, 1998 .

In situ monitoring of ZnS/GaP and ZnSe/GaAs metalorganic vapor phase epitaxy using reflectance anisotropy spectroscopy and spectroscopic ellipsometry

W. Richter, U. W. Pohl, M. Gensch, 2000 .

The adsorption of Sb on InAs(110) studied by photoemission and photoelectron diffraction

W. Richter, D. Zahn, W. Braun, 1995 .

Quantum island formation in CdS/ZnS heterostructures grown by MOVPE

W. Richter, D. Gerthsen, M. Strassburg, 2000 .

Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy

W. Richter, A. Rumberg, M. Weyers, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001)

W. Richter, M. Zorn, M. Pristovsek, 1995 .

Temperature dependence of the InP(001) bulk and surface dielectric function

W. Richter, L. Samuelson, M. Zorn, 1997 .