S. Nekorkin

发表

Quantum Hall effect-insulator transition in the InAs/GaAs system with quantum dots

V. A. Rogozin, V. Kytin, D. Filatov, 2003 .

The dependence of relaxation kinetics of photoluminescence from interband transitions in InGaAs/GaAs quantum wells on their distance from an interface with Au

V. Kukushkin, N. V. Baidus, D. Kuritsyn, 2017 .

Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes

V. Kukushkin, B. Zvonkov, N. V. Baidus, 2016 .

Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates

Z. Krasilnik, A. Dubinov, V. Aleshkin, 2015 .

Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate

M. Drozdov, A. Dubinov, P. Yunin, 2016 .

On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate

A. Dubinov, V. Aleshkin, B. Zvonkov, 2015 .

A multifrequency interband two-cascade laser

V. Gavrilenko, A. Belyanin, S. Morozov, 2007 .

Nonlinear mode mixing in dual-wavelength semiconductor lasers with tunnel junctions

V. Gavrilenko, A. Belyanin, S. Morozov, 2007 .

Simultaneous TE1 and TE2 mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction

A. Dubinov, V. Aleshkin, B. Zvonkov, 2011 .

Substrate-emitting semiconductor laser with a trapezoidal active region

V. Aleshkin, B. Zvonkov, S. Nekorkin, 2014 .

1.06 μm wavelength photodetectors with metamorphic buffer layers grown on GaAs substrates

B. Zvonkov, N. V. Baidus, A. Rykov, 2018, Journal of Physics: Conference Series.

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

S. Morozov, A. Dubinov, V. Aleshkin, 2013 .

Electrical transport and persistent photoconductivity in quantum dot layers in InAs/GaAs structures

A. V. Demin, V. A. Rogozin, V. Kytin, 2001 .

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

A. Dubinov, P. Yunin, V. Aleshkin, 2018, Crystals.

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Z. Krasilnik, A. Dubinov, P. Yunin, 2016 .

Generation of self-sustained pulsations of radiation in InGaAs/GaAs/InGaP quantum-well lasers

V. Gavrilenko, S. Morozov, A. Dubinov, 2007 .

Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

B. Zvonkov, O. Vikhrova, S. Nekorkin, 2013 .

MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons

V. Kukushkin, N. V. Baidus, A. Kruglov, 2019, Semiconductors.

Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

N. V. Malekhonova, B. Zvonkov, O. Vikhrova, 2015 .

GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells

A. Dubinov, B. Zvonkov, N. V. Baidus, 2019 .

The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer

P. Yunin, V. Aleshkin, B. Zvonkov, 2015 .

Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation

B. Zvonkov, Y. Danilov, O. Vikhrova, 2010 .

A compact tunable narrow-band LD based on emission through the substrate and an external abnormal-reflection mirror

V. Sychugov, I. Salakhutdinov, B. Zvonkov, 2001, IEEE Photonics Technology Letters.

The mode competition, instability, and second harmonic generation in dual-frequency InGaAs/GaAs/InGaP lasers

V. Aleshkin, B. Zvonkov, V. Kocharovsky, 2005 .

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Z. F. Krasilnik, P. Yunin, V. Aleshkin, 2017 .

Difference-frequency generation in a butt-join diode laser

V. Gavrilenko, S. Morozov, V. Aleshkin, 2009 .