Chi Sun

发表

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

Guohao Yu, Yong Cai, Xuguang Deng, 2021 .

Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

Baoshun Zhang, Z. Zeng, Guohao Yu, 2021, physica status solidi (a).

A Novel Normally-off Laterally Coupled p-GaN Gate HEMT

T. He, Baoshun Zhang, Guohao Yu, 2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment

T. He, Baoshun Zhang, Yanfei Zhao, 2016, Applied Physics Express.

Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment

Baoshun Zhang, Z. Zeng, Guohao Yu, 2019, Applied Physics Express.

Influence of pressure on the properties of AlN deposited by DC reactive magnetron sputtering on Si (100) substrate

Junshuai Li, Tao Li, Xuguang Deng, 2019, Micro & Nano Letters.

Simulation of enhancement-mode recessed-gate p-channel HFETs based on polarization-induced doping and an InGaN/GaN/AlGaN heterostructure

Baoshun Zhang, Wei Huang, Guohao Yu, 2021 .

Broadband Ultraviolet Photodetector Based on Vertical Ga2O3/GaN Nanowire Array with High Responsivity

Guohao Yu, Yukun Zhao, Kai Zhang, 2019, Advanced Optical Materials.

Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Shulong Lu, Baoshun Zhang, Guohao Yu, 2018, nano Online.

Metalorganic Chemical Vapor Deposition Heteroepitaxial β‐Ga2O3 and Black Phosphorus Pn Heterojunction for Solar‐Blind Ultraviolet and Infrared Dual‐Band Photodetector

Baoshun Zhang, Junshuai Li, Kai Zhang, 2019, physica status solidi (a).

Improvement of Breakdown Voltage and ON-Resistance in Normally-OFF AlGaN/GaN HEMTs Using Etching-Free p-GaN Stripe Array Gate

Baoshun Zhang, Wei Huang, Guohao Yu, 2021, IEEE Transactions on Electron Devices.