Yajin Liu

Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current

H. Kuo, Zi-hui Zhang, Yonghui Zhang, 2020, IEEE Transactions on Electron Devices.

Improving the Current‐Spreading Effect for GaN‐Based Quasi‐Vertical PIN Diode by Using an Embedded PN Junction

Zi-hui Zhang, Yonghui Zhang, Xingyu Jia, 2020, physica status solidi (a).

Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes

H. Kuo, Zi-hui Zhang, Yonghui Zhang, 2019, physica status solidi (a).

Advances of beveled mesas for GaN-based trench Schottky barrier diodes

Zi-hui Zhang, Chunshuang Chu, Yonghui Zhang, 2021 .