Zhaoke Bian

发表

High-performance quasi-vertical GaN Schottky diode with low turn-on voltage

Y. Hao, Jincheng Zhang, Hong Zhou, 2019, Superlattices and Microstructures.

A 1.9-kV/2.61-m ${\text{m}}\Omega\cdot$ cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V

Y. Hao, Tangsheng Chen, Peijun Ma, 2018, IEEE Electron Device Letters.

A > 3 kV/2.94 m $\Omega\cdot$ cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Y. Hao, Tangsheng Chen, Jincheng Zhang, 2019, IEEE Electron Device Letters.

High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Semiconductor Science and Technology.

Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN

Y. Hao, Jincheng Zhang, Jing Ning, 2021 .

Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures

Y. Hao, Jincheng Zhang, Jing Ning, 2021 .

Leakage mechanism of quasi-vertical GaN Schottky barrier diodes with ultra-low turn-on voltage

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Applied Physics Express.

A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics

Jincheng Zhang, Shenglei Zhao, Zhihong Liu, 2022, Journal of Physics D: Applied Physics.

1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination

Y. Hao, Jincheng Zhang, Jing Ning, 2020, IEEE Electron Device Letters.

Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm2) Stress

Q. Feng, Jincheng Zhang, Shenglei Zhao, 2023, IEEE Transactions on Electron Devices.

High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2

Y. Hao, Tangsheng Chen, Jincheng Zhang, 2019, Applied Physics Express.

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration

Tao Zhang, Hong Zhou, Yachao Zhang, 2020, IEEE Transactions on Industrial Electronics.

A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer

Y. Hao, Sen Huang, Jincheng Zhang, 2020, IEEE Transactions on Power Electronics.

Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Journal of Physics D: Applied Physics.

A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021, Applied Physics Express.