James J. Chambers

发表

Advancement of CMOS Doping Technology in an External Development Framework

Amitabh Jain, James J. Chambers, J. B. Shaw, 2011 .

Gate Dielectric Process Technology for the Sub-1 nm Equivalent Oxide Thickness (EOT) Era

Luigi Colombo, James J. Chambers, H. Niimi, 2007 .

Variable Temperature Characteristics of Devices With HfSiON as The High‐κ Dielectric on Nitrided Silicate (SiON) Interfacial Layer

Luigi Colombo, Keith Green, James J. Chambers, 2007 .

Integrity of hafnium silicate/silicon dioxide ultrathin films on Si

Luigi Colombo, James J. Chambers, Rafael Peretti Pezzi, 2002 .

Physics-based 1/ f noise model for MOSFETs with nitrided high- κ gate dielectrics

Luigi Colombo, Keith Green, James J. Chambers, 2008 .

Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors

Luigi Colombo, Keith Green, James J. Chambers, 2005 .

Dopant penetration studies through Hf silicate

Robert M. Wallace, Bruce E. Gnade, Luigi Colombo, 2005 .

Application of HfSiON as a gate dielectric material

Luigi Colombo, James J. Chambers, A. Rotondaro, 2002 .

Effect of nitrogen on band alignment in HfSiON gate dielectrics

Luigi Colombo, Serdar Sayan, Igor Levin, 2005 .

Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon

James J. Chambers, Gregory N. Parsons, Eric Garfunkel, 2001 .