Rong Wang

发表

Nitrogen decoration of basal plane dislocations in 4H-SiC

Deren Yang, Yiqiang Zhang, X. Pi, 2022, 2202.13508.

Doping-dependent nucleation of basal plane dislocations in 4H-SiC

Deren Yang, Yiqiang Zhang, X. Pi, 2022, Journal of Physics D: Applied Physics.

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Yiqiang Zhang, X. Pi, Guangyi Yang, 2022, ACS Applied Electronic Materials.

Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

Deren Yang, X. Pi, Rong Wang, 2014 .

Chemical modification of silicene

X. Pi, Mingsheng Xu, Rong Wang, 2015, 1507.01658.

Nitrogen Decoration of Basal-Plane Dislocations in 4H - Deren Yang, X. Pi, Guangyi Yang, 2022, Physical Review Applied.

Anisotropic deformation of 4H-SiC wafers: insights from nanoindentation tests

Deren Yang, Yiqiang Zhang, X. Pi, 2022, Journal of Physics D: Applied Physics.

Effect of hydrogen on the unintentional doping of 4H silicon carbide

Yiqiang Zhang, X. Pi, Deren Yang, 2022, Journal of Applied Physics.

Compensation of p-type doping in Al-doped 4H-SiC

Yiqiang Zhang, X. Pi, Deren Yang, 2022, Journal of Applied Physics.

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Deren Yang, X. Pi, Guangyi Yang, 2022, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Deformation of 4H-SiC: The role of dopants

Yiqiang Zhang, X. Pi, Yunhao Lu, 2022, Applied Physics Letters.

Effect of hexagonality on the pressure-dependent lattice dynamics of 4H-SiC

Yiqiang Zhang, X. Pi, Yunhao Lu, 2022, New Journal of Physics.

Characterizations on the doping of single-crystal silicon carbide

X. Pi, Lihui Song, Deren Yang, 2022, Materials Today Physics.

Dislocations in 4H silicon carbide

H. Luo, Deren Yang, Yiqiang Zhang, 2022, Journal of Physics D: Applied Physics.

Analysis of the photovoltaic properties of n-type compensated silicon solar cells with the Al-alloyed emitter

Deren Yang, Xuegong Yu, Chengquan Xiao, 2013 .

Silicene oxides: formation, structures and electronic properties

Deren Yang, X. Pi, Mingsheng Xu, 2013, Scientific Reports.

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Yiqiang Zhang, X. Pi, Wantang Wang, 2023, Advanced Materials Interfaces.

Physical-Vapor-Transport Growth of 4H Silicon Carbide Single Crystals by a Tiling Method

X. Pi, Deren Yang, Yue Gao, 2022, Journal of Crystal Growth.

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

Deren Yang, Yiqiang Zhang, X. Pi, 2022, Journal of Semiconductors.

First-Principles Study on the Surface Chemistry of 1.4 nm Silicon Nanocrystals: Case of Hydrosilylation

Deren Yang, X. Pi, Rong Wang, 2012 .

Impurities and defects in 4H silicon carbide

X. Pi, Deren Yang, Rong Wang, 2023, Applied Physics Letters.

X. Pi, C. Cui, Guangyi Yang, 2023, Frontiers in Materials.

Assessing the effect of H on the electronic properties of 4H-SiC

Deren Yang, Yiqiang Zhang, X. Pi, 2021, Chinese Physics B.

Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements

Deren Yang, Yiqiang Zhang, X. Pi, 2021, Chinese Physics B.

Formation kinetics and mechanism of metastable vacancy-dioxygen complex in neutron irradiated Czochralski silicon

Xiangyang Ma, Deren Yang, Xuegong Yu, 2017 .

Surface modification of chlorine-passivated silicon nanocrystals.

Deren Yang, X. Pi, Rong Wang, 2013, Physical chemistry chemical physics : PCCP.

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

X. Pi, Deren Yang, Rong Wang, 2023, The Journal of Physical Chemistry C.

Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage

X. Pi, Deren Yang, H. Tian, 2023, Crystal Growth & Design.

Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

Deren Yang, Yiqiang Zhang, X. Pi, 2022, SSRN Electronic Journal.

Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping

Yiqiang Zhang, X. Pi, Xuqing Zhang, 2023, Semiconductor Science and Technology.

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

X. Pi, Lingbo Xu, Deren Yang, 2023, Advanced Materials Interfaces.

Nitrogen-Dependent Electronic Properties of Threading Edge Dislocations in 4H-SiC

X. Pi, Deren Yang, Jiajun Li, 2023, ACS Applied Electronic Materials.

Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

X. Pi, Rong Wang, Lingbo Xu, 2024, Journal of Semiconductors.

Study of effects of varying parameters on the dislocation density in 200 mm SiC bulk growth

X. Pi, Rong Wang, Deren Yang, 2023, Journal of Crystal Growth.