Carmine Abbate

发表

Thermal damage in SiC Schottky diodes induced by SE heavy ions

Nicola Delmonte, Francesco Iannuzzo, Giovanni Busatto, 2014, Microelectron. Reliab..

Multi-baseline SAR Interferometry using Elaboration of Amplitude and Phase Data

Annarita Evangelista, Carmine Abbate, Roberto Di Folco, 2015 .

Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2014, IEEE Industrial Electronics Magazine.

Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2004, Microelectron. Reliab..

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation

Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, 2018, Microelectron. Reliab..

Analysis of Low- and High-Frequency Oscillations in IGBTs During Turn-ON Short Circuit

Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, 2015, IEEE Transactions on Electron Devices.

The robustness of series-connected high power IGBT modules

Francesco Iannuzzo, Giovanni Busatto, B. Cascone, 2007, Microelectron. Reliab..

Thermal instability during short circuit of normally-off AlGaN/GaN HFETs

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2013, Microelectron. Reliab..

Investigation of MOSFET failure in soft-switching conditions

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2006, Microelectron. Reliab..

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit

Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, 2017, Microelectron. Reliab..

Measure of high frequency input impedance to study the instability of power devices in short circuit

Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, 2018, Microelectron. Reliab..

Analysis of Current in Pulsating DC Link Converter with Zero Voltage Transition

Giovanni Busatto, Francesco Velardi, Carmine Abbate, 2020, 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).

High Frequency Behavior of High Power IGBT Modules

Carmine Abbate, Roberto Di Folco, Southern Lazio, 2015 .

Measurement of IGBT High-Frequency Input Impedance in Short Circuit

Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, 2017, IEEE Transactions on Power Electronics.

Series Connection ofHighPowerIGBTmodules fortraction applications

L. Fratelli, G. Busatto, B. Cascone, 2005 .

Non Destructive SOA Testing of Power Modules (Invited)

Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, 2010 .

Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2008 .

Instable mechanisms during unclamped operation of high power IGBT modules

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2009, Microelectron. Reliab..

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, 2015, Microelectron. Reliab..

IGBT modules robustness during turn-off commutation

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2008, Microelectron. Reliab..

The high frequency behaviour of high voltage and current IGBT modules

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2006, Microelectron. Reliab..

Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit

Francesco Iannuzzo, Giovanni Busatto, Francesco Velardi, 2013, Microelectron. Reliab..

Operation of SiC normally-off JFET at the edges of its safe operating area

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2011, Microelectron. Reliab..

Turn-off instabilities in large area IGBTs

Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, 2014, Microelectron. Reliab..

COMPARISON AMONG ELIGIBLE TOPOLOGIES FOR MARX KLYSTRON MODULATORS

Francesco Iannuzzo, F. Bedeschi, Giovanni Busatto, 2010 .

Testing Integrated COTS DC/DC Converters in Hostile Environment

Nicola Delmonte, Francesco Iannuzzo, Giorgio Spiazzi, 2014 .

Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2006 .

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, 2018, Microelectron. Reliab..

EMIAnalysis inHighpowerConverters forTraction Application

L. Fratelli, G. Busatto, B. Cascone, 2005 .

Unclamped repetitive stress on 1200 V normally-off SiC JFETs

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2012, Microelectron. Reliab..

Modelling and Analysis of EMI Generated of Power IGBT Modules

Carmine Abbate, Roberto Di Folco, Southern Lazio, 2015 .

Characterisation of high-voltage IGBT modules at high temperature and high currents

Francesco Iannuzzo, Francesco Velardi, L. Fratelli, 2003, The Fifth International Conference on Power Electronics and Drive Systems, 2003. PEDS 2003..

IGBT RBSOA non-destructive testing methods: Analysis and discussion

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2010, Microelectron. Reliab..

Radiation performance of new semiconductor power devices for the LHC experiment upgrades

Nicola Delmonte, Gaudenzio Meneghesso, Enrico Zanoni, 2015 .

Isolated DC/AC Converter with ZVT based on Pulsating DC Link

Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate, 2020, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC).

Developments on DC/DC converters for the LHC experiment upgrades

Nicola Delmonte, Alessandro Paccagnella, Gaudenzio Meneghesso, 2014 .

Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit

Giovanni Busatto, Annunziata Sanseverino, Carmine Abbate, 2014 .