D. Antoniadis

A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

A. Khakifirooz, O.M. Nayfeh, D. Antoniadis, 2009, IEEE Transactions on Electron Devices.

Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

Vivek De, J. Tschanz, S. Narendra, 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).

Process simulation for device design and control

R. Dutton, D. Antoniadis, 1979, 1979 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.