Charles R. Eddy

发表

Atomic layer epitaxy for quantum well nitride-based devices

Jaime A. Freitas, Jennifer K. Hite, Neeraj Nepal, 2016, SPIE OPTO.

Invited) Developing Periodically Oriented Gallium Nitride for Frequency Conversion

Jaime A. Freitas, Jerry R. Meyer, Steven R. Bowman, 2015 .

Ultra-Thin Gate Dielectrics for Leakage Current Suppression in Vertically-Scaled GaN MIS-Hemts

Mario G. Ancona, David J. Meyer, Ming Pan, 2013 .

Frequency conversion in free-standing periodically oriented gallium nitride

Jaime A. Freitas, Igor Vurgaftman, Jerry R. Meyer, 2016, SPIE LASE.

Progress in the Resolution of Materials Challenges for High-Voltage SiC Power Devices

Charles R. Eddy, Anindya Nath, Nadeemullah A. Mahadik, 2013 .

Reactive-ion etching of tungsten for high-resolution x-ray masks

Martin C. Peckerar, Charles R. Eddy, Christie R. Marrian, 1994, Advanced Lithography.

Graphene growth on SiC(000-1): optimization of surface preparation and growth conditions

D. K. Gaskill, Charles R. Eddy, Nelson Y. Garces, 2015, SPIE NanoScience + Engineering.

Starting our quantum journey together in a new decade

Charles R. Eddy, Philippe Bouyer, 2020 .

ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices

Aris Christou, Francis J. Kub, Andrew D. Koehler, 2017 .

Epitaxial graphene: dry transfer and materials characterization

Travis J. Anderson, Jennifer K. Hite, Fritz J. Kub, 2010, NanoScience + Engineering.

Comparison of dry-etch approaches for tungsten patterning

Martin C. Peckerar, K. W. Rhee, Orest J. Glembocki, 1994, Advanced Lithography.

Pulsed-laser deposition of YBa2Cu307-La0.67Sr0.33MnO3 thin film multilayers for spin injection devices

Raymond C. Y. Auyeung, James S. Horwitz, Douglas B. Chrisey, 1998, Photonics West.

Invited) Periodically Oriented Gallium Nitride for Frequency Conversion

Jaime A. Freitas, Jerry R. Meyer, K. Udwary, 2016 .

Digital Doping of ALD VO2 for Thermochromic Applications

Charles R. Eddy, Marc Currie, Brian P. Downey, 2017 .

(Invited) Electrothermal Performance Optimization of III-Nitride HEMTs Capped with Nanocrystalline Diamond

Tatyana I. Feygelson, Mario G. Ancona, Bradford B. Pate, 2016 .

Normally-Off AlGaN/GaN Mos-Hemts Using ZrO2 Gate Dielectric with Tuneable Charge

Francis J. Kub, Andrew D. Koehler, Charles R. Eddy, 2017 .

Plasmonically enhanced emission from an inverted GaN light emitting diode

Ji Hyun Kim, Jennifer K. Hite, Michael A. Mastro, 2011, NanoScience + Engineering.

ZnS/diamond composite coatings for infrared transmission applications formed by the aerosol deposition method

Fritz J. Kub, Charles R. Eddy, Scooter D. Johnson, 2013, Defense, Security, and Sensing.

Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation

Jordan D. Greenlee, Francis J. Kub, Andrew D. Koehler, 2014, IEEE Electron Device Letters.

Hall effect mobility of epitaxial graphene grown on silicon carbide

Charles R. Eddy, D. Kurt Gaskill, Jr., 2009, 0907.5026.

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Francis J. Kub, Andrew D. Koehler, Neeraj Nepal, 2013, IEEE Electron Device Letters.

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons

Jaime A. Freitas, Jennifer K. Hite, Michael A. Mastro, 2011 .

Characterization of as-deposited and sintered yttrium iron garnet thick films formed by aerosol deposition

Fritz J. Kub, Charles R. Eddy, Evan R. Glaser, 2014 .

Role of growth parameters in equalizing simultaneous growth of N‐ and Ga‐polar GaN by MOCVD

Jennifer K. Hite, Michael A. Mastro, Charles R. Eddy, 2014 .

In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD

Charles R. Eddy, D. Kurt Gaskill, Rachael L. Myers-Ward, 2007 .

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile

Charles R. Eddy, D. Kurt Gaskill, Leonid Fursin, 2009 .

Nanocrystalline diamond films as UV-semitransparent Schottky contacts to 4H-SiC

James E. Butler, Tatyana I. Feygelson, Mario G. Ancona, 2007 .

Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

Tatyana I. Feygelson, Mario G. Ancona, Bradford B. Pate, 2014, IEEE Electron Device Letters.

Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

Jennifer K. Hite, Michael A. Mastro, Charles R. Eddy, 2010 .

Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics

Charles R. Eddy, D. Kurt Gaskill, N. Y. Garces, 2012 .

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

Jaime A. Freitas, Jordan D. Greenlee, Fritz J. Kub, 2016, Journal of Electronic Materials.

Etch Processing of III-V Nitrides

Charles R. Eddy, 1999 .

4kV Silicon Carbide MOSFETs

Osama S. Saadeh, Charles R. Eddy, D. Kurt Gaskill, 2011 .

Graphene Formation on SiC Substrates

Charles R. Eddy, D. Kurt Gaskill, Joseph L. Tedesco, 2009 .

Ion-implanted edge termination for GaN Schottky diode rectifiers

Francis J. Kub, S. Noor Mohammad, Charles R. Eddy, 2006 .

Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode

Jerry R. Meyer, Igor Vurgaftman, Michael A. Mastro, 2008, 2009.01155.

GaN Power Transistors with Integrated Thermal Management

Tatyana I. Feygelson, Mario G. Ancona, Bradford B. Pate, 2013 .

Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiNx Layers

Fritz J. Kub, Jennifer K. Hite, Michael A. Mastro, 2010 .

Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-k Dielectrics

David J. Meyer, Jennifer K. Hite, Neeraj Nepal, 2011 .

Development of periodically oriented gallium nitride for non-linear optics [Invited]

Jaime A. Freitas, Jerry R. Meyer, Steven R. Bowman, 2012 .

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

Yang Yang, Jennifer K. Hite, Charles R. Eddy, 2010, 1007.5064.

Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs

Robert Bass, David J. Meyer, Charles R. Eddy, 2010, DRC 2010.

Challenges to graphene growth on SiC(0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient

M. V. Rao, Jennifer K. Hite, Charles R. Eddy, 2015 .

Plasma-Based Chemical Modification of Epitaxial Graphene

Charles R. Eddy, D. Kurt Gaskill, Sandra C. Hernández, 2012 .